4Q85-D44H11

Single Bipolar Transistors Overview

The onsemi D44H11 is an NPN silicon power transistor manufactured using low voltage multi-epitaxial planar technology. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 10 A. The device offers a power dissipation capacity of 70 W in a TO-220-3 package, with a gain-bandwidth product of 50 MHz. It operates within a junction temperature range of -55 °C to +150 °C and includes a minimum DC current gain (hFE) of 60.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient conduction
• Fast switching speed suitable for high-frequency applications
• Designed for general purpose linear and switching operations

Single Bipolar Transistors Applications

• General purpose linear circuits
• High-speed switching applications
• Power supply output stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Ensure the ordering code matches the required package variant. Confirm RoHS compliance status through manufacturer documentation before integration into regulated designs.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring robust NPN switching with moderate voltage ratings. Consider the TO-220 package for through-hole mounting requirements. Evaluate thermal management needs based on the 70 W dissipation rating and ambient operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the D44H11 series of bipolar junction transistors from onsemi. It is designed as a replacement or alternative for similar NPN power transistors in the 80V, 10A class. The series utilizes planar technology for reliable performance in standard industrial and consumer electronics environments.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include MJF44H11G and MJD44H11T4G. Verify pin compatibility and thermal resistance values when substituting. Ensure the alternative device meets the same voltage and current specifications for direct interchangeability.