50C02MH-TL-E

Single Bipolar Transistors Overview

The 50C02MH-TL-E is a single NPN bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 700 mA. The device operates with a maximum power dissipation of 700 mW and supports junction temperatures up to 150 °C. Packaged in the compact 3-CPH (SOT-23) surface-mount format, it offers a minimum DC current gain of 300 at specified test conditions.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with a transition frequency of 500 MHz
• Low collector-to-emitter saturation voltage for efficient conduction
• Ultrasmall package design facilitating miniaturization in end products

Single Bipolar Transistors Applications

• Low-frequency amplifier circuits
• High-speed switching applications
• Small motor drive systems

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TL-E against official datasheets to confirm pinout and electrical characteristics match the target design requirements. Ensure compatibility with RoHS3 standards and check moisture sensitivity level classifications before assembly. Confirm that the 3-CPH footprint aligns with the printed circuit board layout specifications.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with high current gain and moderate voltage ratings is required. The 500 MHz transition frequency makes it suitable for faster switching speeds compared to standard general-purpose transistors. Consider the 700 mW power dissipation limit and thermal management needs for the chosen operating environment.

Single Bipolar Transistors Part Context

This part belongs to the 50C02 series of small signal transistors from onsemi. It is designed as a low VCE(sat) NPN single transistor intended for general-purpose applications requiring reliable performance in space-constrained designs. The MCPH3 package provides a balance between thermal performance and board area efficiency.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.