55GN01CA-TB-E

Bipolar RF Transistors Overview

The onsemi 55GN01CA-TB-E is an NPN single CP RF transistor designed for high-frequency applications. It features a maximum collector-to-emitter voltage of 10V and a continuous collector current of 70mA, with a power dissipation rating of 200mW. The device achieves a typical gain-bandwidth product (fT) of 5.5GHz at VCE=5V and IC=20mA. At 1GHz, it provides a forward transfer gain (|S21e|^2) of 9.5dB and a noise figure of 1.9dB under specific bias conditions. Packaged in a surface-mount CP format compatible with SC-59/TO-236/SOT-23 standards, it supports operation up to a junction temperature of 150°C.

Bipolar RF Transistors Feature Summary

• High cutoff frequency capability reaching 5.5GHz typical performance
• Low noise figure of 1.9dB at 1GHz for sensitive signal reception
• High forward transfer gain of 9.5dB at 1GHz
• Surface mount packaging suitable for automated assembly

Bipolar RF Transistors Applications

• RF amplifier stages in communication systems
• Low-noise amplification in receiver front-ends
• Ultra-high frequency band signal processing circuits

Bipolar RF Transistors Procurement Notes

Verify the component against the official onsemi datasheet specifications before integration. Confirm that the ordering suffix TB-E corresponds to the correct tape-and-reel packing quantity of 3,000 pieces per reel. Ensure compatibility with standard SOT-23 land patterns during PCB layout design.

Bipolar RF Transistors Selection Notes

Select this component when designing circuits requiring high gain and low noise at frequencies around 1GHz. Evaluate the 5.5GHz fT specification against the target operating frequency to ensure adequate margin. Consider the 200mW power dissipation limit and thermal management requirements for the chosen application environment.

Bipolar RF Transistors Part Context

This part belongs to the 55GN01 series of RF transistors manufactured by onsemi. It utilizes a silicon NPN technology optimized for ultra-high frequency operations. The device is housed in a compact CP package, facilitating its use in space-constrained electronic designs requiring reliable RF performance.

Bipolar RF Transistors Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Verify pinout compatibility and electrical parameters such as VCEO, IC, and fT when considering alternative components from other manufacturers.