Single Bipolar Transistors 6385_2N2907A product image

6385_2N2907A

  • Description:TRANS PNP 60V 0.6A TO-18
  • Series:-

SKU:63777a5a233c Category: Brand:

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6385_2N2907A is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 60V 0.6A TO-18. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 6385_2N2907A

  • Description:TRANS PNP 60V 0.6A TO-18
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 10V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 6385_2N2907A

6385_2N2907A

Single Bipolar Transistors Overview

The onsemi 2N2907A is a PNP silicon epitaxial planar transistor designed for general-purpose amplifier and high-speed switching applications. It features a collector-emitter breakdown voltage of 60V, a continuous collector current of 600mA, and a maximum power dissipation of 625mW at 25°C ambient temperature. The device exhibits a low collector saturation voltage and a transition frequency up to 200MHz. It is available in through-hole TO-18 metal can packages.

Single Bipolar Transistors Feature Summary

  • Designed for high-speed saturated switching applications
  • Low collector saturation voltage for efficient operation
  • Suitable for complementary use with NPN type transistors

Single Bipolar Transistors Applications

  • General-purpose amplification circuits
  • High-speed switching applications
  • Complementary pairs with NPN transistors

Single Bipolar Transistors Procurement Notes

Verify the specific package variant (TO-18 vs TO-92) as manufacturers may offer different form factors under the same part number. Confirm RoHS compliance status, as legacy versions may not meet current environmental standards. Check for obsolescence notices, as some distributors list this component as discontinued or end-of-life. Ensure the supplier provides official datasheets matching the requested electrical characteristics.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 60V collector-emitter voltage and 600mA current capability is required. Consider the TO-18 metal can package for hermetic sealing needs or TO-92 for standard through-hole mounting. Evaluate the 625mW power dissipation limit against thermal management requirements. Verify compatibility with complementary NPN devices like the 2N2222A if used in push-pull configurations.

Single Bipolar Transistors Part Context

The 2N2907A belongs to the widely recognized 2N series of bipolar junction transistors. It serves as the PNP counterpart to the popular NPN 2N2222A. Manufactured by onsemi, it maintains the standard electrical specifications associated with the military-derived 2N nomenclature while offering modern manufacturing consistency.

Single Bipolar Transistors Replacement Considerations

  • 2N2907
  • MMBT2907A
  • CMPT2907A

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2N2907A?

The maximum collector-emitter breakdown voltage (VCEO) is 60V.

Is the 2N2907A suitable for high-frequency switching?

Yes, it has a transition frequency (fT) of 200MHz, making it suitable for high-speed switching applications.

What is the typical DC current gain (hFE)?

The minimum DC current gain is specified as 100 at a collector current of 150mA and Vce of 10V.

6385_2N2907A6385_2N2907A

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