7143LA35J8

Overview

The Renesas Electronics Corporation 7143LA35J8 is a volatile static random-access memory (SRAM) integrated circuit. It features a parallel interface and an access time of 35 ns. The device provides a storage capacity of 32K bits, organized as 4096 words by 8 bits. It operates within a supply voltage range of 4.5V to 5.5V and supports surface-mount installation in a 68-LCC (J-Lead) package. The component is rated for commercial operating temperatures between 0°C and 70°C.

Feature Summary

• Dual-port asynchronous architecture enabling independent simultaneous read/write operations at two separate ports.

Applications

• High-speed data buffering in embedded systems requiring concurrent port access.

Procurement Notes

Verify the Last Time Buy status with authorized distributors before finalizing procurement plans. Confirm that the 68-LCC(J-Lead) package matches the target PCB footprint. Ensure compliance with RoHS requirements, as this specific part number may not meet current environmental standards. Validate lead-free availability if required by assembly processes.

Selection Notes

Select this component when a dual-port SRAM with 32K-bit density and 35 ns speed is required. The 68-pin LCC package suits applications needing high pin counts in a compact form factor. Verify that the 4.5V to 5.5V supply voltage aligns with the system power rails. Consider the commercial temperature range suitability for the intended operational environment.

Part Context

This part belongs to the IDT/Renesas 7143 series of dual-port SRAMs. These devices are designed for applications requiring high-performance memory with independent port access. The series typically offers various speed grades and package options to accommodate different design constraints. The 7143LA35J8 specifically targets parallel interface applications needing reliable volatile storage.

Replacement Considerations

No verified public substitute part numbers are available for this component.