7N65L

Single FETs, MOSFETs Overview

The UMW 7N65L is an N-channel power MOSFET designed for high-voltage switching applications. It features a drain-source voltage rating of 650V and a continuous drain current of 7.0A at 25°C case temperature. The device incorporates a low on-resistance of 1.4Ω (max) at VGS=10V, ensuring efficient conduction with minimal power loss. Packaged in TO-252, it supports tape and reel delivery for automated assembly. Key electrical characteristics include a gate threshold voltage ranging from 2.0V to 4.0V and a total gate charge of 28nC. Thermal performance is defined by a junction-to-case thermal resistance of 3.13°C/W, suitable for robust heat dissipation in compact designs.

Single FETs, MOSFETs Feature Summary

• High breakdown voltage capability up to 650V for reliable operation in demanding power circuits
• Optimized on-state resistance to minimize conduction losses during active switching periods
• Integrated body diode with controlled reverse recovery characteristics for synchronous rectification
• Robust packaging design supporting surface-mount mounting techniques for PCB integration

Single FETs, MOSFETs Applications

• High-voltage DC-DC converter topologies requiring efficient step-down or step-up regulation
• Motor drive circuits utilizing H-bridge configurations for precise speed and direction control
• Power supply units incorporating primary-side switching for isolated output generation
• Inductive load switching interfaces managing relay or solenoid actuation currents

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant matches the required footprint, as the base model supports multiple housing types including TO-220, TO-220F, TO-263, and TO-252. Confirm that the ordering suffix corresponds to the desired delivery format, such as tape and reel for SMD variants. Ensure all technical specifications align with the target application's thermal and electrical constraints before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage isolation combined with moderate current handling capabilities. The TO-252 package offers a balance between thermal performance and space efficiency for surface-mount implementations. Consider the gate charge requirements against the driving capability of the controller IC to ensure adequate switching speeds without excessive drive losses.

Single FETs, MOSFETs Part Context

This device belongs to the UMW 7N65 series of N-channel enhancement mode field effect transistors. The series provides a standardized solution for medium-power switching tasks across various industrial and consumer electronics sectors. The 7N65L specifically denotes the surface-mount version housed in the TO-252 package, distinguishing it from through-hole alternatives within the same electrical family.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 650V/7.0A rating and TO-252 package dimensions. Verify pinout compatibility and thermal resistance values to ensure equivalent performance in existing layouts.