A2F12M12W2-F1

IGBT Modules Overview

The A2F12M12W2-F1 is an ACEPACK 2 power module utilizing a fourpack topology with second-generation silicon carbide Power MOSFETs. It features a typical drain-source on-resistance of 13 mΩ per switch and a 1200 V blocking voltage. The device includes an integrated NTC temperature sensor and press-fit contact pins. Electrical ratings specify a continuous drain current of 75 A at 25 °C, a maximum junction temperature of 175 °C, and a UL-certified insulation voltage of 2.5 kVrms. Thermal resistance from junction to heat sink is 0.72 °C/W.

IGBT Modules Feature Summary

• Fourpack topology integrating advanced SiC MOSFET technology
• Integrated NTC temperature sensor for thermal monitoring
• DBC Cu-Al2O3-Cu substrate for high thermal performance
• Press-fit contact pins for secure mounting

IGBT Modules Applications

• DC/DC converters

IGBT Modules Procurement Notes

Verify the specific datasheet revision (DS13840 Rev 4) against the manufacturing date code to ensure alignment with absolute maximum ratings and electrical characteristics. Confirm that the ordering suffix matches the required package configuration and environmental compliance grade before finalizing procurement orders.

IGBT Modules Selection Notes

Select this component for designs requiring low conduction losses and high switching frequencies in compact power stages. Ensure the gate drive circuit supports the recommended operating VGS range of -5 V to 18 V. Verify that the PCB layout accommodates the press-fit pin geometry and provides adequate creepage distances for the 2.5 kVrms isolation requirement.

IGBT Modules Part Context

This module belongs to the STMicroelectronics ACEPACK 2 series, designed for high-power density applications. It leverages wide-bandgap silicon carbide material properties to achieve superior switching performance that remains stable across varying temperatures. The fourpack architecture allows for complex topologies within a single encapsulated unit.

IGBT Modules Replacement Considerations

Direct replacements must match the 1200 V rating, fourpack topology, and press-fit package dimensions. Evaluate alternative SiC modules based on comparable RDS(on) values and thermal resistance specifications to maintain system efficiency and cooling requirements.