A2U8M12W3-FC

$136.69

Description：MOSFET 4N-CH 750V/1.2KV 180A
Series：ECOPACK®

SKU:10ecfeb40c39 Category: FET, MOSFET Arrays Brand: STMicroelectronics

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

A2U8M12W3-FC is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET 4N-CH 750V/1.2KV 180A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for A2U8M12W3-FC

Description：MOSFET 4N-CH 750V/1.2KV 180A
Series：ECOPACK®
Mfr：STMicroelectronics
Package：Bulk
Technology：Silicon Carbide (SiC)
Configuration：4 N-Channel (Three Level Inverter)
FET Feature：-
Drain to Source Voltage (Vdss)：750V, 1.2kV
Current - Continuous Drain (Id) @ 25°C：180A, 140A
Rds On (Max) @ Id, Vgs：8mOhm @ 100A, 18V, 12.5mOhm @ 100A, 18V
Vgs(th) (Max) @ Id：4.2V @ 2mA, 4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs：288nC @ 18V, 304nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：7660pF @ 400V, 7370pF @ 800V
Power - Max：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for A2U8M12W3-FC

A2U8M12W3-FC

FET, MOSFET Arrays Overview

The A2U8M12W3-FC is an ACEPACK 2 power module implementing a 3-level topology using third-generation silicon carbide MOSFETs. It integrates high-voltage and low-voltage switches with DC link capacitors and an NTC sensor. The NH and NL switches are rated at 750 V with a typical RDS(on) of 6 mΩ, while BH and BL switches are rated at 1200 V with a typical RDS(on) of 9.5 mΩ. Continuous drain currents are 180 A for NH/NL and 140 A for BH/BL at TH = 25 °C. The module features 3 kVrms insulation, press-fit pins, and an AlN DBC substrate.

FET, MOSFET Arrays Feature Summary

Implements a 3-level topology integrating third-generation SiC MOSFETs
Includes integrated DC link capacitors between DC BUS and neutral
Features an AlN DBC substrate for improved thermal performance
Equipped with press-fit contact pins and an integrated NTC temperature sensor

FET, MOSFET Arrays Applications

DC-DC converters
Complex topologies requiring high power density
High efficiency power conversion systems

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering code A2U8M12W3-FC against the latest STMicroelectronics datasheet DS14691 Rev 2 to confirm current product status and availability. Ensure that the required press-fit tooling is compatible with the ACEPACK 2 package dimensions before procurement. Check for any updated environmental compliance grades or ECOPACK specifications relevant to the target application region.

FET, MOSFET Arrays Selection Notes

Select this module when designing 3-level inverter or converter topologies that demand high switching frequencies and low conduction losses. The mixed voltage rating (750 V and 1200 V) allows for optimized component selection within the same leg. Consider the thermal resistance of 0.39 °C/W per switch when designing the heatsink interface, ensuring the use of appropriate thermal interface material with specified conductivity.

FET, MOSFET Arrays Part Context

This component belongs to the ACEPACK 2 family from STMicroelectronics, designed for advanced power electronics. It utilizes silicon carbide technology to achieve superior performance compared to traditional silicon devices. The module is part of a series offering various configurations for different voltage and current requirements in industrial and automotive applications.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the ACEPACK 2 form factor and pinout. Verify that alternative modules support the same 3-level topology and have comparable RDS(on) values. Ensure the substitute device meets the 3 kVrms isolation requirement and includes necessary integrated components like capacitors if replacing the complete module.