A5G35S008N-3400

RF FETs, MOSFETs Overview

The A5G35S008N is an Airfast RF power GaN transistor designed for cellular base station applications in the 3300 to 3800 MHz frequency range. It operates at a recommended voltage of 48 Vdc with a quiescent current of 24 mA, delivering 27 dBm average output power. The device features high terminal impedances and is optimized for massive MIMO active antenna systems. Key electrical characteristics include a typical power gain of 18.6 dB, drain efficiency of 19.0%, and saturated power of 39.7 dBm. It supports wideband ruggedness with a 400 MHz instantaneous bandwidth.

RF FETs, MOSFETs Feature Summary

• High terminal impedances for optimal broadband performance
• Designed for low complexity linearization systems
• Universal broadband driver capability
• Optimized for massive MIMO active antenna systems

RF FETs, MOSFETs Applications

• Cellular base station applications
• Massive MIMO active antenna systems for 5G base stations
• Broadband driver stages

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix T6 when sourcing, as it indicates tape and reel packaging containing 5,000 units on a 12 mm width, 13-inch reel. Confirm the product status is Production rather than Preliminary or Objective before finalizing design-in decisions. Ensure compliance with RoHS standards and check for any export control regulations applicable to this component.

RF FETs, MOSFETs Selection Notes

Select the A5G35S008N for designs requiring operation within the 3300 to 3800 MHz band. The internal matching simplifies circuit layout compared to discrete transistors. Consider the thermal resistance values for heat sinking requirements. Verify that the application can accommodate the required biasing sequence to prevent device damage during power-up and power-down cycles.

RF FETs, MOSFETs Part Context

This component belongs to NXP's Airfast family of RF power GaN transistors. These devices are engineered for high-performance wireless infrastructure. The A5G35S008N specifically targets mid-band 5G frequencies, offering a balance of gain, efficiency, and linearity suitable for modern cellular network architectures requiring robust broadband capabilities.

RF FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

RF FETs, MOSFETs FAQ

What is the maximum channel temperature rating?

The maximum channel temperature (TCH) is rated at 225 °C.

How should the device be biased to ensure proper operation?

Turn-on sequence: Set VGS to pinch-off (-5 V), apply VDS (+48 V), then increase VGS to attain IDS current. Turn-off sequence: Remove RF power, reduce VGS to pinch-off, drop VDS to 0 V, then turn off VGS.

What is the moisture sensitivity level?

The device has a Moisture Sensitivity Level (MSL) rating of 3, with a peak reflow temperature of 260 °C per JESD22-A113.