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The ART2K0PEGY is a dual N-channel LDMOS RF power transistor based on Advanced Rugged Technology (ART). It delivers 2000 W output power across a frequency range of 1 MHz to 450 MHz. The device features a 65 V drain-source breakdown voltage and a maximum junction temperature of 225 °C. Key electrical parameters include a typical gain of 27.7 dB, a drain efficiency of 71.7%, and an on-state resistance of 106 mΩ. It utilizes the OMP-1230-4G-1 surface mount package and includes integrated dual-sided ESD protection.
Verify the specific ordering suffix 'Y' corresponds to the TR13 reel packing format containing 100 pieces per dry pack. Confirm that the component meets RoHS compliance requirements by checking the official product details on the manufacturer's website. Ensure proper ESD handling precautions are observed during storage and assembly due to the Charged Device Model sensitivity classification.
Select this component for high-power broadband applications requiring robust performance in ISM, broadcast, and communication sectors. The device supports characterization from 30 V to 65 V, offering flexibility for various supply voltages. Its unmatched design simplifies matching network implementation while maintaining high efficiency and thermal stability across the specified frequency range.
This part belongs to the ART2K0PE family of power LDMOS transistors manufactured by Ampleon. The ART2K0PEG variant specifically denotes the version packaged in the OMP-1230-4G-1 form factor. The 'Y' suffix indicates the reel packaging configuration, distinguishing it from tray-packed versions like the ART2K0PEGZ.
The ART2K0PEZ or ART2K0PEY may serve as functional substitutes if the OMP-1230-4F-1 package outline is acceptable. Verify pin compatibility and ensure the alternative package dimensions align with the existing PCB footprint and thermal management requirements.