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A6G35H075NT2 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF POWER. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for A6G35H075NT2
- Description：RF POWER
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for A6G35H075NT2
Single Bipolar Transistors Overview
The A6G35H075NT2 is a GaN field-effect transistor manufactured by NXP Semiconductors. It utilizes a DFN 7x10-10L package configuration. The component is classified under the GAN FETs product category within the transistors sub-classification. This specific part number is currently listed as discontinued in the manufacturer's lifecycle status.
Single Bipolar Transistors Feature Summary
- Utilizes Gallium Nitride (GaN) technology for high-frequency performance
- Designed for RF power applications requiring efficient switching
Single Bipolar Transistors Applications
- RF power amplification systems
- High-frequency circuit design
- Telecommunications infrastructure components
Single Bipolar Transistors Procurement Notes
This component is officially designated as discontinued by NXP Semiconductors. Availability is restricted, and Mouser indicates the product is not sold in certain regions. Verification of current stock or substitute availability through authorized distributors is required before integration into new designs due to end-of-life status.
Single Bipolar Transistors Selection Notes
Engineers should consider this part only for legacy system maintenance or repair. New designs must evaluate alternative active GaN FETs from the NXP portfolio that offer current supply chain support. Verify pin compatibility and thermal requirements when transitioning from this discontinued model to active replacements.
Single Bipolar Transistors Part Context
The A6G35H075NT2 belongs to NXP's broader portfolio of semiconductor solutions focused on enabling sensory experiences and power management. While the specific unit is discontinued, it represents the company's historical engagement with Gallium Nitride technology for specialized radio frequency applications.
Single Bipolar Transistors Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to the discontinued status, direct cross-reference data is absent. Consult official NXP technical support for validated alternatives.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
