AC2M0025120D

$10.57

Description：SIC MOSFET N-CH 1200V 94A TO247-
Series：SIC MOSFET-D
Mfr：APSEMI
Package：Tube

SKU:307763b37d7c Category: Single FETs, MOSFETs Brand: APSEMI

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

AC2M0025120D is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists APSEMI. Its product description is SIC MOSFET N-CH 1200V 94A TO247-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AC2M0025120D

Description：SIC MOSFET N-CH 1200V 94A TO247-
Series：SIC MOSFET-D
Mfr：APSEMI
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：94A
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：32mOhm @ 50A, 20V
Vgs(th) (Max) @ Id：4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：380W (Tc)
Operating Temperature：-55°C ~ 150°C
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AC2M0025120D

AC2M0025120D

Single FETs, MOSFETs Overview

The AC2M0025120D is a Silicon Carbide (SiC) N-Channel Enhancement Mode Power MOSFET manufactured by APSemi. It features a TO-247-3 package and offers a Drain-Source Voltage (V_DS) of 1200 V with a maximum continuous drain current (I_D) of 94 A at 25°C. The device exhibits a low on-resistance (R_DS(on)) of 25 mΩ typical value at V_GS = 20 V and I_D = 50 A. Key electrical characteristics include a gate threshold voltage of 2.6 V typical, input capacitance of 3086 pF, and total gate charge of 192 nC. Thermal performance includes a junction-to-case thermal resistance (R_θJC) of 0.24 °C/W typical.

Single FETs, MOSFETs Feature Summary

High blocking voltage capability combined with low on-resistance for improved system efficiency.
Fast switching speed and fast reverse recovery characteristics suitable for high-frequency applications.
Simple to drive and easy to parallel for scalable power designs.
Avalanche ruggedness and resistance to latch-up.

Single FETs, MOSFETs Applications

Induction heating
Switch mode power supplies
DC/DC converters
Solar inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer designation, as this component may be produced under different brand names within the same product family. Confirm that the ordering suffix matches the required package type and compliance standards. Ensure the datasheet revision aligns with your design requirements. Check for any specific handling instructions regarding electrostatic discharge during procurement and storage.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring efficient power conversion. The low R_DS(on) minimizes conduction losses, while fast switching reduces dynamic losses. Consider the thermal resistance when designing heat sinks. Ensure the gate drive circuitry supports the recommended operating voltage range and accounts for the total gate charge for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the Silicon Carbide Power MOSFET category from APSemi. It utilizes SiC technology to achieve superior performance compared to traditional silicon devices in high-voltage environments. The TO-247-3 package provides robust mechanical mounting and thermal dissipation capabilities for industrial power electronics.