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Product Detailed Parameters
- Description:DIODE SIL CARB 1200V 54A TO2472
- Series:WBG
- Mfr:Analog Power Inc.
- Package:Tube
- Technology:SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):1200 V
- Current - Average Rectified (Io):54A
- Voltage - Forward (Vf) (Max) @ If:1.85 V @ 20 A
- Speed:No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):-
- Current - Reverse Leakage @ Vr:10 µA @ 1200 V
- Capacitance @ Vr, F:12pF @ 0V, 100kHz
- Mounting Type:Through Hole
- Package / Case:TO-247-2
- Supplier Device Package:TO-247-2
- Operating Temperature - Junction:-55°C ~ 175°C
- Grade:-
- Qualification:-
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Overview
The Analog Power ADC4D20120H is a 1200-V wide bandgap diode housed in a TO-247-2L package. It supports a maximum average forward current of 20 A and a repetitive peak reverse voltage of 1200 V. The device exhibits a typical forward voltage of 1.85 V at 20 A and 25°C, with a junction capacitance of 12 pF at 200 V. Thermal resistance from junction to case is rated at 1.45 °C/W, while the junction-to-ambient rating is 40 °C/W on an FR4 board. Operating temperatures range from -40°C to 175°C for the junction.
Feature Summary
- Utilizes silicon carbide technology for high-performance switching capabilities
- Features highly stable forward voltage and reverse recovery characteristics at elevated temperatures
- Designed for easy paralleling due to positive temperature coefficient behavior
- Maintains very low junction capacitance to support high-frequency operation
Applications
- Soft switching topologies
- Secondary side rectification
Procurement Notes
Verify the specific datasheet revision (DS_ADC4D20120H_1A) against your design requirements. Confirm that the TO-247-2L footprint matches your PCB layout constraints. Ensure thermal management solutions account for the specified junction-to-case resistance values under your expected operating conditions. Validate all electrical parameters with Analog Power technical experts before finalizing the implementation.
Selection Notes
Select this component when designing circuits requiring robust 1200-V blocking capability combined with efficient rectification. The TO-247-2L package facilitates effective heat dissipation for applications demanding up to 20 A continuous current. Consider the low junction capacitance for high-speed switching environments where minimizing capacitive losses is critical for overall system efficiency.
Part Context
This part belongs to the Analog Power direct wide bandgap diode series. It is engineered to replace traditional silicon counterparts in high-voltage power conversion systems. The device integrates advanced semiconductor materials to deliver superior thermal stability and switching performance compared to standard rectifiers.
Replacement Considerations
Cross-reference pinouts and thermal characteristics carefully when substituting other 1200-V TO-247-2L diodes. Verify that alternative components meet or exceed the 20 A forward current rating and 1.45 °C/W junction-to-case thermal resistance specifications to maintain system reliability.
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