FET, MOSFET Arrays ADP360120W3 product image

ADP360120W3

$2,592.79
  • Description:MOSFET 6N-CH 1200V 379A ACEPACK
  • Series:-

SKU:0031a5995a47 Category: Brand:

  
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ADP360120W3 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET 6N-CH 1200V 379A ACEPACK. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for ADP360120W3

  • Description:MOSFET 6N-CH 1200V 379A ACEPACK
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tray
  • Technology:Silicon Carbide (SiC)
  • Configuration:6 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:379A (Tj)
  • Rds On (Max) @ Id, Vgs:3.45mOhm @ 360A, 18V
  • Vgs(th) (Max) @ Id:4.4V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs:944nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds:28070pF @ 800V
  • Power - Max:704W (Tj)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:ACEPACK
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for ADP360120W3

ADP360120W3

FET, MOSFET Arrays Overview

The ADP360120W3 is an automotive-grade silicon carbide (SiC) MOSFET module from STMicroelectronics, housed in the ACEPACK DRIVE sixpack package. It features a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 379 A. The typical on-resistance is 2.55 mOhms, with a gate-source voltage range of -10 V to +22 V and a threshold voltage of 4.4 V. Power dissipation is rated at 704 W, and it operates within a temperature range of -40 °C to +175 °C. The module includes diodes with a forward voltage of 4.3 V and holds AEC-Q100 qualification.

FET, MOSFET Arrays Feature Summary

  • Automotive-grade reliability certified under AEC-Q100 standards for robust performance in demanding environments.
  • Utilizes advanced silicon carbide technology to achieve low on-resistance and high switching efficiency.
  • Integrated sixpack configuration simplifies power stage design by combining multiple devices in a single module.
  • High thermal capability supports operation up to 175 °C junction temperature for extended durability.

FET, MOSFET Arrays Applications

  • Electric vehicle traction inverters
  • On-board chargers for electric vehicles
  • Industrial motor drives

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or direct channels. Confirm the specific revision level matches project requirements. Check for AEC-Q100 certification documentation to ensure automotive compliance. Validate packaging integrity upon receipt. Cross-reference datasheet parameters against final application specifications before integration.

FET, MOSFET Arrays Selection Notes

Select this module for high-power applications requiring automotive reliability and SiC efficiency. Ensure gate driver compatibility with the specified -10 V to +22 V range. Verify thermal management solutions can handle the 704 W dissipation rating. Consider the ACEPACK package dimensions for PCB layout constraints. Evaluate system-level benefits of reduced switching losses against cost factors.

FET, MOSFET Arrays Part Context

This part belongs to STMicroelectronics' ACEPACK DRIVE series of silicon carbide modules. These modules are designed for high-performance power conversion systems. The sixpack topology integrates three half-bridges into one compact unit. This series targets automotive and industrial markets where size and efficiency are critical.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available for this specific model. Direct replacements must match the 1200V/379A ratings and ACEPACK package form factor. Consult STMicroelectronics engineering support for qualified alternatives if discontinuation occurs.

ADP360120W3ADP360120W3
$2,592.79
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