AFGH4L25T120RWD

Single IGBTs Overview

The onsemi AFGH4L25T120RWD is a discrete N-channel IGBT utilizing Field Stop VII (FS7) technology, housed in a TO-247-4LD package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 25 A at 100°C. The device exhibits a typical saturation voltage of 1.4 V at 25 A and supports a maximum junction temperature of 175°C. It includes an integrated Gen7 Diode with a forward voltage of 1.7 V at 25 A. Thermal resistance from junction to case is 0.36°C/W for the IGBT and 0.66°C/W for the diode.

Single IGBTs Feature Summary

• Utilizes extremely efficient trench field stop technology for optimized performance.
• Short circuit rated capability with low saturation voltage characteristics.
• Fast switching performance with tightened parameter distribution.
• AEC-Q101 qualified and PPAP available upon request.

Single IGBTs Applications

• Automotive E-compressor
• Automotive EV PTC Heater
• On-board Charger (OBC)

Single IGBTs Procurement Notes

Verify component authenticity by checking the marking diagram against the physical device. Confirm the assembly plant code, date code, and lot traceability match the ordering information. Ensure the package type corresponds to TO-247-4LD. Validate RoHS compliance status through official documentation before integration into automotive systems.

Single IGBTs Selection Notes

Select this component for hard and soft switching topologies requiring low on-state voltage and minimal switching losses. Consider the 1200 V rating and 25 A current capacity for automotive power stages. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values for both the IGBT and the integrated diode.

Single IGBTs Part Context

This part belongs to the AFGH4L series of automotive-grade IGBTs. It shares the FS7 technology platform with other models like the AFGH4L60T120RWx-STD but offers lower current ratings. The TO-247-4LD package provides separate Kelvin emitter connections for improved switching control compared to standard three-terminal packages.

Single IGBTs Replacement Considerations

Direct replacements within the same family include the AFGH4L60T120RWD-STD, which shares the same package and technology but offers higher current capabilities. Verify pin compatibility and thermal characteristics when substituting with other FS7 devices.

Single IGBTs FAQ

What is the short circuit withstand time for this device?

The short circuit withstand time is 6 microseconds, measured at VGE = 15 V, VCC = 800 V, and TC = 150°C.

Does this device support high-temperature operation?

Yes, the maximum operating junction temperature is +175°C, allowing for robust performance in demanding automotive environments.

What is the gate threshold voltage range?

The gate-to-emitter threshold voltage ranges from a minimum of 5.1 V to a maximum of 6.9 V under test conditions of IC = 25 mA.