AFGH4L60T120RWD-STD

Single IGBTs Overview

The onsemi AFGH4L60T120RWD-STD is an N-channel Field Stop VII (FS7) IGBT with a Gen7 Diode in a TO247-4L package. It features a 1200 V collector-emitter voltage and a 60 A continuous collector current at 100°C. The device has a typical saturation voltage of 1.68 V at 25°C and supports a maximum junction temperature of 175°C. It includes a Kelvin emitter for optimized switching performance.

Single IGBTs Feature Summary

• Utilizes Field Stop VII trench technology to achieve low conduction and switching losses suitable for automotive hard and soft switching topologies.
• Features a short-circuit rated design with a 6 ms withstand time at 800 V, ensuring robust protection under fault conditions.
• Includes a dedicated Kelvin emitter pin to minimize gate drive noise and improve switching stability.
• Qualified to AEC-Q101 standards with PPAP availability for automotive supply chain requirements.

Single IGBTs Applications

• Automotive E-compressor
• Automotive EV PTC Heater
• On-board Charger (OBC)

Single IGBTs Procurement Notes

Verify the specific ordering suffix matches the required configuration. Confirm that the component meets AEC-Q101 qualification standards if automotive compliance is mandatory. Ensure thermal management designs account for the specified junction-to-case resistance values to maintain reliability within the 175°C operating limit.

Single IGBTs Selection Notes

Select this component for high-efficiency automotive power conversion where low switching loss is critical. Evaluate the gate charge characteristics against the driver capability to ensure optimal switching speeds. Consider the short-circuit rating when designing protection circuits for inductive loads in electric vehicle applications.

Single IGBTs Part Context

This part belongs to onsemi's FS7 IGBT family, designed specifically for automotive environments. It integrates advanced trench field-stop technology to balance conduction and switching performance. The TO247-4L package provides a reliable solution for high-power density modules used in modern electric and hybrid vehicles.

Single IGBTs Replacement Considerations

Direct replacements must match the 1200V/60A rating and TO247-4L footprint. Verify compatibility of the saturation voltage and gate charge parameters to ensure equivalent thermal and switching behavior in the target circuit design.

Single IGBTs FAQ

What is the maximum short-circuit withstand time?

The device is rated for a short-circuit withstand time of 6 milliseconds at a junction temperature of 150°C, with VGE set to 15 V and VCC at 800 V.

How does the TO247-4L package benefit switching performance?

The four-lead package includes a separate Kelvin emitter (E1) distinct from the power emitter (E2), which reduces gate drive loop inductance and improves switching stability.

Is this component qualified for automotive use?

Yes, the AFGH4L60T120RWD-STD is AEC-Q101 qualified and PPAP is available upon request, making it suitable for automotive applications.