AFT05MS004-200M

RF FETs, MOSFETs Overview

The AFT05MS004NT1 is a high ruggedness N-channel enhancement-mode lateral MOSFET designed for handheld two-way radio applications across the 136 to 941 MHz frequency range. It provides approximately 4 W of output power at 7.5 Vdc, making it suitable for large-signal common-source amplifier configurations. The device features unmatched input and output ports, integrated ESD protection, and stability enhancements.

RF FETs, MOSFETs Feature Summary

• Characterized for operation from 136 to 941 MHz
• Unmatched input and output allowing wide frequency range utilization
• Integrated ESD protection
• Extreme ruggedness with exceptional thermal performance

RF FETs, MOSFETs Applications

• Output stage VHF band handheld radio
• Output stage UHF band handheld radio
• Driver for 10–1000 MHz applications

RF FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The T1 suffix indicates tape and reel packaging containing 1,000 units on a 12 mm tape width with a 7-inch reel. Ensure compatibility with standard SOT-89 surface mount processes and validate thermal management requirements for continuous wave operation.

RF FETs, MOSFETs Selection Notes

Select this component for designs requiring broadband coverage in handheld transceivers. The device supports both narrowband and wideband reference circuits. Verify that the system can accommodate the required gate-source voltage thresholds and bias currents. Confirm impedance matching networks align with the provided series equivalent source and load impedances for optimal power transfer.

RF FETs, MOSFETs Part Context

This LDMOS transistor belongs to the RF Power LDMOS family optimized for mobile communication equipment. It utilizes advanced process technology to deliver high gain and linearity within a compact SOT-89 package. The device is engineered to withstand extreme load mismatches while maintaining stable performance under varying thermal conditions typical of portable radio environments.

RF FETs, MOSFETs Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinouts and thermal characteristics when evaluating potential replacements to ensure mechanical and electrical compatibility without redesigning the host circuit board or bias network.

RF FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDSS) rating is +30 Vdc.

How does the device handle load mismatch conditions?

The device exhibits extreme ruggedness, showing no degradation when subjected to greater than 65:1 VSWR at all phase angles with 3 dB overdrive.

What ESD protection levels are supported?

The device passes 1000 V via the Human Body Model (JESD22-A114), 100 V via the Machine Model (EIA/JESD22-A115), and 2000 V via the Charge Device Model (JESD22-C101).