RF FETs, MOSFETs AFV141KGSR5 product image

AFV141KGSR5

$467.36
  • Description:RF MOSFET LDMOS 50V NI1230
  • Series:-

SKU:e98559139520 Category: Brand:

  
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AFV141KGSR5 is listed in the RF FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF MOSFET LDMOS 50V NI1230. Review the specifications below when checking this part for your BOM.

RF FETs, MOSFETs specifications for AFV141KGSR5

  • Description:RF MOSFET LDMOS 50V NI1230
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.4GHz
  • Gain:17.7dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:1000W
  • Voltage - Rated:105 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:NI-1230-4S GW
  • Supplier Device Package:NI-1230-4S GULL
  • Configuration:Dual

RF FETs, MOSFETs datasheet and documents for AFV141KGSR5

AFV141KGSR5

RF FETs, MOSFETs Overview

The AFV141KGSR5 is an Airfast RF Power LDMOS transistor manufactured by NXP Semiconductors. It operates within the 1200-1400 MHz frequency range and delivers a peak power output of 1000 W. The device is rated for a test voltage of 50 V and a maximum rated voltage of 105 V. It utilizes NI-1230-4S surface mount packaging. The component features a typical gain of 17.7 dB at 1400 MHz. This part is currently classified as obsolete in the product lifecycle.

RF FETs, MOSFETs Feature Summary

  • Utilizes Airfast LDMOS technology for high-efficiency RF power amplification
  • Designed for high peak power delivery up to 1000 W in the UHF band
  • Engineered with robust voltage handling capabilities for demanding RF applications

RF FETs, MOSFETs Applications

  • UHF base station power amplification
  • Broadband RF signal generation
  • High-power transmitter modules

RF FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels due to obsolete status. Confirm package integrity and pin alignment against NI-1230-4S specifications. Review datasheet revisions for any historical parameter updates. Ensure compatibility with existing thermal management solutions. Validate supply chain provenance before integration into production systems.

RF FETs, MOSFETs Selection Notes

Consider the obsolete lifecycle status when planning long-term production runs. Evaluate alternative components from the same manufacturer family if availability is critical. Assess thermal requirements based on the 1000 W peak power specification. Verify that the 1200-1400 MHz operational range matches system frequency needs. Check for compatible replacement parts with similar voltage and power ratings.

RF FETs, MOSFETs Part Context

This component belongs to NXP's Airfast series of RF power transistors, specifically designed for broadband applications. It represents a legacy solution for high-power UHF amplification using LDMOS technology. The NI-1230-4S package provides a compact form factor suitable for surface mount assembly in dense circuit layouts.

RF FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, direct replacements may require design modifications. Consult NXP technical support for current portfolio alternatives.

AFV141KGSR5AFV141KGSR5
$467.36
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