AFV141KHR5

RF FETs, MOSFETs Overview

The AFV141KHR5 is an RF LDMOS transistor manufactured by NXP USA Inc., designed for broadband power applications. It operates within a frequency range of 960 MHz to 1215 MHz and delivers a peak output power of 1000 W. The device is rated for a drain-source voltage of 105 V, with testing conducted at 50 V. Packaged in the NI-1230H format, this component utilizes LDMOS technology to provide high efficiency and linearity for demanding RF signal generation tasks.

RF FETs, MOSFETs Feature Summary

• Broadband operation capability across specified UHF frequencies
• High peak output power delivery for robust signal transmission
• LDMOS technology construction for enhanced thermal and electrical performance

RF FETs, MOSFETs Applications

• Broadband RF power amplification
• UHF transmitter systems
• Industrial, Scientific, and Medical (ISM) equipment

RF FETs, MOSFETs Procurement Notes

Verify the specific package variant, as sources reference both NI-1230H and NI-1230-4H designations. Confirm RoHS3 compliance status directly with the manufacturer or authorized distributors. Ensure the procurement channel provides valid datasheets matching the exact suffix to guarantee correct electrical characteristics and pinout configuration.

RF FETs, MOSFETs Selection Notes

Select this component when designing systems requiring high peak power in the 960-1215 MHz band. Consider the 105 V rating for biasing requirements. Evaluate thermal management solutions suitable for 1000 W peak dissipation. Verify compatibility with existing PCB footprints for the NI-1230 series packages before integration.

RF FETs, MOSFETs Part Context

This part belongs to NXP's portfolio of RF power transistors intended for high-performance communication infrastructure. It serves as a critical active element in linear amplifier stages where wide bandwidth and high power density are required. The LDMOS architecture offers a balance of gain, efficiency, and ruggedness compared to alternative semiconductor technologies.

RF FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult NXP official cross-reference guides or contact technical support directly for validated alternatives that match the specific electrical and mechanical requirements.