AIDK16S65C5ATMA1

Overview

The AIDK16S65C5ATMA1 is a Silicon Carbide Schottky Diode from the 5th Generation CoolSiC™ Automotive portfolio. It features a maximum repetitive peak reverse voltage of 650 V and a continuous forward current rating of 16 A at a case temperature of 129 °C. The device operates within a junction temperature range of -40 °C to 175 °C and utilizes a PG-TO263-2-1 (D2PAK) package with real two pins.

Feature Summary

• Utilizes Silicon Carbide semiconductor material for superior thermal performance
• Exhibits zero reverse recovery charge and no forward recovery effects
• Demonstrates temperature-independent switching behavior across operating ranges
• Qualified for automotive applications in accordance with AEC-Q100/101 standards

Applications

• Booster and DCDC Converter circuits
• On-board Charger and Power Factor Correction systems

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering code matches the required automotive qualification status. Ensure compliance with RoHS directives and Pb-free lead plating specifications prior to integration into final assemblies.

Selection Notes

Select this component for high-frequency power conversion designs requiring reduced cooling infrastructure. The low figure of merit facilitates higher system reliability and increased power density compared to silicon alternatives. Evaluate thermal resistance parameters against the specific heatsink requirements of the target application environment.

Part Context

This part belongs to the 5th Generation CoolSiC™ Automotive Schottky Diode family, designed to complement Infineon’s IGBT and CoolMOS™ portfolios. It addresses stringent requirements in the 650V voltage class by leveraging thin wafer technology for improved efficiency under all load conditions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.