AIDW16S65C5XKSA1

Description：DIODE SIC 650V 16A PGTO247341
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Tube

SKU:be26c8f3dceb Category: Single Diodes Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：DIODE SIC 650V 16A PGTO247341
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：16A
Voltage - Forward (Vf) (Max) @ If：1.7 V @ 16 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：90 µA @ 650 V
Capacitance @ Vr, F：471pF @ 1V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-41
Operating Temperature - Junction：-40°C ~ 175°C
Grade：Automotive
Qualification：AEC-Q100/101

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AIDW16S65C5XKSA1

Overview

The AIDW16S65C5 is a 650V/16A Silicon Carbide Schottky Diode in the PG-TO247-3 package. It features a maximum repetitive reverse voltage of 650 V and a continuous forward current of 16 A at TC = 129 °C. The junction temperature range spans from -40°C to 175°C, with a power dissipation of 94 W at TC = 25°C. Non-repetitive peak forward current reaches 637 A (10µs) and surge current is 95 A (10ms). Forward voltage is typically 1.5 V at 16 A and 25°C.

Feature Summary

Automotive qualified product validated according to AEC-Q100/101 standards
Temperature independent switching behavior with no reverse or forward recovery
High dv/dt ruggedness rated at 100 V/ns under specified conditions
Low figure of merit (Qc x Vf) enabling improved system efficiency

Applications

Traction inverter systems
Booster and DCDC converters
On-board chargers and PFC circuits

Procurement Notes

Verify component authenticity through authorized Infineon distributors. Confirm that the ordering code matches the specific automotive grade designation. Ensure compliance with RoHS requirements and Pb-free lead plating specifications during procurement. Validate storage temperature limits between -55°C and 150°C to maintain device integrity prior to assembly.

Selection Notes

Select this component for high-frequency applications requiring reduced cooling due to lower operating temperatures. Consider its compatibility with Infineon IGBT and CoolMOS portfolios for optimized system design. Evaluate thermal resistance parameters against heat sink capabilities to ensure junction temperature remains within the 175°C maximum limit during operation.

Part Context

This device belongs to the 5th Generation CoolSiC Automotive Schottky Diode family. It utilizes thin wafer technology to achieve benchmark switching behavior. The product is designed to complement existing silicon-based solutions while offering higher reliability and reduced electromagnetic interference in demanding power electronics environments.