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AIKB30N65DH5ATMA1 is listed in the Single IGBTs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IGBT NPT 650V 30A TO263-3-2. Review the specifications below when checking this part for your BOM.
The AIKB30N65DH5ATMA1 is a single N-channel IGBT from Infineon's TRENCHSTOP™ IGBT5 H5 series, housed in a D2PAK-3 (TO-263-3) surface-mount package. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 74 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.65 V and supports a power dissipation of 250 W. Operating temperatures range from -40°C to +175°C.
Verify the exact part number suffix against official Infineon documentation to confirm specific tape-and-reel packaging configurations and RoHS compliance status. Ensure that the ordering information matches the required industrial temperature range and thermal characteristics specified in the latest datasheet revision before finalizing procurement orders.
Select this component when a 650 V rating and high current capacity are required in a compact SMD form factor. Consider the 1.65 V saturation voltage for thermal management calculations. Verify compatibility with existing gate drive voltages and ensure adequate heatsinking for the 250 W power dissipation capability under expected load conditions.
This device belongs to the TRENCHSTOP™ IGBT5 family, which integrates advanced trench gate and field-stop technologies. The H5 variant specifically targets improved switching characteristics compared to standard IGBT5 models. It serves as a discrete solution for medium-power applications requiring robust performance in space-constrained designs.
Direct replacements include AIKB30N65DF5ATMA1 and AIKB40N65DH5ATMA1. Verify pinout compatibility and electrical parameter differences, particularly regarding saturation voltage and current ratings, before substituting these alternatives in existing circuit designs.
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