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AIMBG75R040M1HXTMA1 is listed in the Single IGBTs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IGBT. Review the specifications below when checking this part for your BOM.
The AIMBG75R040M1H is a CoolSiC Automotive Power Device rated at 750 V, utilizing silicon carbide technology. It features a PG-TO263-7 package with a tab drain and dedicated driver source pin. Key electrical parameters include a maximum on-state resistance of 52 mΩ at Tj=25°C and a typical gate charge of 34 nC. The device supports continuous drain currents of 47 A at 25°C case temperature and peak currents up to 134 A. It operates within a junction temperature range of -55°C to +175°C and has been qualified according to AEC Q101 standards for automotive applications.
Verify the specific ordering code against the final data sheet revision to ensure compatibility with current manufacturing standards. Confirm that the application design accounts for the non-interchangeable nature of the source and driver source pins to prevent potential malfunction during assembly or operation.
Select this component for designs requiring high efficiency in hard switching or higher frequencies in soft switching topologies. Ensure the thermal management system can handle the specified power dissipation limits. Consider the impact of cosmic radiation effects if the application involves blocking voltages exceeding 525 V.
This part belongs to the CoolSiC Automotive Power Device 750 V G1 series from Infineon Technologies. It leverages over 20 years of silicon carbide development experience to provide a balance of performance, reliability, and ease of use suitable for harsh operating environments.
Direct replacements must match the PG-TO263-7 package and 750V rating. Verify that any substitute maintains the required RDS(on) and gate charge specifications to preserve the original circuit's switching performance and thermal profile.
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