AIMDQ75R040M1HXUMA1

Single IGBTs Overview

The AIMDQ75R040M1H is a CoolSiC™ Automotive Power Device featuring 750 V drain-source voltage and a maximum on-state resistance of 52 mΩ at Tj = 25°C. It operates with a continuous DC drain current of 47 A at TC = 25°C and supports a peak pulse current of 134 A. The device utilizes the PG-HDSOP-22 package, providing a thermal resistance from junction to case of 0.71 °C/W. Total gate charge is typically 34 nC, while output charge (Qoss) at 500 V is 68 nC. It functions within an operating temperature range of -55°C to +175°C.

Single IGBTs Feature Summary

• Highly robust 750 V technology with 100% avalanche testing
• Best-in-class RDS(on) x Qfr product for superior hard switching efficiency
• Excellent RDS(on) x Qoss and RDS(on) x QG ratios for soft switching topologies
• Unique combination of low Crss/Ciss capacitance and high VGS(th) for parasitic turn-on robustness

Single IGBTs Applications

• Uni- and bidirectional On Board Chargers
• HV-LV DCDC converters using hard switching half bridges
• HV-LV DCDC converters utilizing soft switching topologies

Single IGBTs Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the ordering suffix matches the specific package variant required for your design. Ensure compliance with automotive quality standards such as AEC-Q101 during the procurement process. Request relevant documentation including datasheets and application notes to validate technical suitability before finalizing orders.

Single IGBTs Selection Notes

Select this component for applications requiring high-temperature operation up to 175°C and robust performance in harsh environments. Consider the dedicated driver source pin for optimized gate control and reduced switching losses. Evaluate the thermal management requirements based on the 0.71 °C/W junction-to-case resistance. Ensure the PCB layout minimizes stray inductances to fully leverage the device's fast switching capabilities.

Single IGBTs Part Context

This part belongs to the CoolSiC™ G1 family of 750 V silicon carbide MOSFETs designed specifically for automotive applications. It represents Infineon's proprietary die attach technology combined with a cutting-edge top-side cooling package. The series focuses on delivering best-in-class efficiency metrics for power conversion systems operating beyond standard silicon limits.

Single IGBTs Replacement Considerations

Direct replacements must match the PG-HDSOP-22 package and 750 V rating. Verify that alternative components meet the same thermal resistance and electrical characteristics. Note that source and driver source pins are not exchangeable; ensure pinout compatibility if substituting with other manufacturers' devices.