ALD110900SAL

FET, MOSFET Arrays Overview

The ALD110900SAL is a dual N-Channel MOSFET array manufactured using EPAD® CMOS technology. It features Zero-Threshold™ voltage with VGS(th) set at +0.00V ±0.02V and offset voltage (VOS) max of 10mV. The device operates within a drain-source voltage (VDS) range up to 10.6V and dissipates 500mW. Key electrical parameters include RDS(ON) of 500Ω @ VGS=4.0V, input capacitance (Ciss) max of 2.5pF @ 5V, and turn-on/turn-off delay times of 10ns. It is housed in an 8-pin SOIC package.

FET, MOSFET Arrays Feature Summary

• Precision matched pair characteristics with factory-set zero threshold voltage for minimal level shift
• EPAD® CMOS technology enabling excellent temperature coefficient tracking between devices
• Low input capacitance and leakage currents suitable for high impedance applications

FET, MOSFET Arrays Applications

• Very low voltage analog and digital circuits
• Precision current mirrors and current sources
• Differential amplifier input stages
• Analog switches and multiplexers
• Zero power fail-safe circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and lead-free status. Ensure the component meets RoHS compliance requirements if applicable to the design. Confirm that the operating temperature range aligns with system specifications before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring precise matching and near-zero threshold operation. Consider the 500Ω on-resistance at 4V gate drive when designing switching loads. Evaluate the 10.6V breakdown limit for supply voltage headroom. Verify thermal management capabilities given the 500mW power dissipation rating in the selected package.

FET, MOSFET Arrays Part Context

This part belongs to the ALD110900 family of precision matched pair MOSFET arrays. It shares core electrical characteristics with variants like the ALD110900PAL but differs in packaging. The series utilizes Electrically Programmable Analog Device technology to achieve tight parametric control and threshold voltage accuracy across manufacturing batches.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the dual N-channel configuration, zero threshold specification, and 8-SOIC package. Verify pinout compatibility and ensure substitute components offer similar offset voltage and temperature tracking performance.