ALD110914PAL

FET, MOSFET Arrays Overview

The ALD110914PAL is a quad/dual N-channel enhancement mode EPAD precision matched pair MOSFET array manufactured by Advanced Linear Devices. It features a standard gate threshold voltage of +1.40V with a typical offset voltage of 31mV and a maximum mismatch of 10mV. The device operates within a supply range of +1.5V to +10V, supporting a drain-source voltage of 10.6V and power dissipation of 500 mW. Key electrical parameters include an on-resistance of 500 Ω at VGS=+5.4V, input capacitance of 2.5 pF, and turn-on/off delay times of 10 ns. It offers high input impedance (10^12 Ω typical) and DC current gain exceeding 10^8.

FET, MOSFET Arrays Feature Summary

• Factory-matched monolithic quad/dual N-channel MOSFETs utilizing EPAD CMOS technology for exceptional electrical characteristic matching.
• Designed for low voltage small signal applications with very low input bias current and fast switching speed capabilities.
• Features excellent temperature coefficient tracking characteristics due to devices being located on the same monolithic chip.
• Capable of parallel connection to increase drain currents while maintaining tight lot-to-lot parametric control.

FET, MOSFET Arrays Applications

• Precision current mirrors
• Voltage choppers
• Differential amplifier input stages
• Sample and Hold circuits
• Discrete analog multiplexers

FET, MOSFET Arrays Procurement Notes

Verify the specific package variant required, as the PAL suffix indicates an 8-pin Plastic DIP configuration. Confirm that the +1.40V threshold voltage aligns with system requirements, noting that custom threshold values are available upon factory request. Ensure static control procedures are followed during handling due to ESD sensitivity. Check for RoHS compliance status if lead-free specifications are mandatory for the assembly process.

FET, MOSFET Arrays Selection Notes

Select this component when high precision matching and low offset voltage are critical for analog signal processing. The +1.40V threshold makes it suitable for low voltage systems operating between +1.5V and +10V. Consider the 500 mW power dissipation limit and 10.6V breakdown voltage when designing circuit layouts. The high input impedance minimizes loading effects in sensitive measurement or buffering applications.

FET, MOSFET Arrays Part Context

This device belongs to the ALD1108xx/ALD1109xx family of enhancement mode EPAD MOSFET arrays. The '14' suffix denotes the specific +1.40V threshold voltage setting. It shares architectural similarities with zero-threshold (ALD110800/110900) and depletion mode (ALD1148xx/1149xx) variants within the same EPAD product line, all sharing the core matched-pair design philosophy.

FET, MOSFET Arrays Replacement Considerations

No direct public substitute part numbers are documented in the provided datasheet. Cross-reference tools suggest consulting manufacturer databases for functional equivalents, but specific alternative part numbers are not listed in the source material.