ALD111933PAL

FET, MOSFET Arrays Overview

The ALD111933PAL is a dual N-Channel Enhancement Mode Matched Pair MOSFET Array manufactured by Advanced Linear Devices Inc. in an 8-pin Plastic DIP package. It features a precision matched +3.30V threshold voltage with a maximum offset voltage of 20mV. The device operates within a supply range of +3.0V to +10V, offering low input capacitance (2.5 pF typical) and fast switching speeds (10 ns turn-on/off). Built using EPAD® CMOS technology, it provides high input impedance (10^12 Ω typical) and excellent temperature coefficient tracking for precision analog applications.

FET, MOSFET Arrays Feature Summary

• Precision matched dual N-Channel MOSFETs with factory-calibrated +3.30V threshold voltage
• Ultra-low leakage currents and high input impedance suitable for nano-watt power applications
• Excellent thermal tracking characteristics due to monolithic construction
• Fast switching speed with low input capacitance for small signal applications

FET, MOSFET Arrays Applications

• Precision current mirrors and sources
• Discrete voltage comparators and zero standby power monitors
• Sample and hold circuits and analog switches
• Sensor interfaces and capacitive probes
• Energy harvesting circuits and level shifters

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix PAL indicates the 8-pin Plastic DIP package configuration when sourcing components. Confirm RoHS compliance status as the datasheet notes the 'L' suffix denotes lead-free materials, though standard manufacturing practices often apply this universally. Ensure the operating environment remains within the specified 0°C to +70°C range for optimal performance matching.

FET, MOSFET Arrays Selection Notes

Select the ALD111933PAL for designs requiring precise threshold matching without external calibration. The +3.30V gate threshold makes it suitable for low-voltage systems where standard MOSFETs may not switch reliably. Consider the 8-pin DIP package for prototyping or through-hole assembly requirements. Evaluate the 20mV max offset voltage against circuit sensitivity needs for differential amplifier input stages.

FET, MOSFET Arrays Part Context

This component belongs to the ALD1108xx/ALD1109xx product family of monolithic quad/dual N-Channel MOSFETs. These devices utilize ALD’s Electrically Programmable Analog Device (EPAD) technology to achieve exceptional electrical characteristic matching. The family includes various threshold voltages ranging from depletion to enhancement modes, allowing designers to select specific turn-on characteristics for different analog and digital circuit applications.

FET, MOSFET Arrays Replacement Considerations

Direct replacements are limited due to the proprietary EPAD matching technology. Standard discrete MOSFET pairs cannot replicate the factory-trimmed 20mV offset voltage or thermal tracking. Designers must evaluate if custom-matched pairs from other manufacturers can meet the specific threshold and leakage requirements before attempting substitution.