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ALD114913PAL is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Advanced Linear Devices Inc.. Its product description is MOSFET 2N-CH 10.6V 8PDIP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for ALD114913PAL
- Description：MOSFET 2N-CH 10.6V 8PDIP
- Series：EPAD®
- Mfr：Advanced Linear Devices Inc.
- Package：Tube
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Matched Pair
- FET Feature：Depletion Mode
- Drain to Source Voltage (Vdss)：10.6V
- Current - Continuous Drain (Id) @ 25°C：12mA, 3mA
- Rds On (Max) @ Id, Vgs：500Ohm @ 2.7V
- Vgs(th) (Max) @ Id：1.26V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：2.5pF @ 5V
- Power - Max：500mW
- Operating Temperature：0°C ~ 70°C (TJ)
- Mounting Type：Through Hole
- Package / Case：8-DIP (0.300", 7.62mm)
- Supplier Device Package：8-PDIP
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for ALD114913PAL
FET, MOSFET Arrays Overview
The ALD114913PAL is a dual N-channel depletion mode MOSFET array utilizing EPAD technology. It features a gate threshold voltage of -1.30V and operates within a supply range of ±5V. Key electrical parameters include a drain-source breakdown voltage of 10V, an on-resistance of 1.3kΩ at VGS=0V, and low leakage currents (4nA max at 125°C). The device offers precision matching with an offset voltage of 72mV typical and operates from 0°C to +70°C in the PAL package.
FET, MOSFET Arrays Feature Summary
- Precision matched pair configuration for temperature tracking
- Depletion mode operation with subthreshold characteristics
- Ultra-low power nanowatt circuit capability
- Low input and output leakage currents
FET, MOSFET Arrays Applications
- Functional replacement of Form B (NC) relays
- Ultra low power analog and digital circuits
- Sub-threshold biased and operated circuits
- Zero power fail safe circuits in alarm systems
- Backup battery circuits
FET, MOSFET Arrays Procurement Notes
Verify the specific PAL package designation against the datasheet pinout diagrams. Confirm that the -1.30V threshold voltage aligns with the application requirements. Ensure static control procedures are followed due to ESD sensitivity. Check for industrial temperature range availability if operating outside the standard commercial limits.
FET, MOSFET Arrays Selection Notes
Select this component when a depletion mode device with a specific negative threshold voltage is required. The dual configuration suits differential or balanced circuit designs. Consider the 1.3kΩ on-resistance at ground potential for biasing applications. Verify that the 10V breakdown voltage meets the system's maximum signal swing requirements.
FET, MOSFET Arrays Part Context
This part belongs to the ALD1148xx/ALD1149xx family of depletion mode EPAD MOSFET arrays. The '13' suffix indicates the -1.30V threshold voltage specification. The 'PAL' suffix denotes the 8-pin plastic DIP package variant. It complements enhancement mode and zero-threshold devices within the broader EPAD product line.
FET, MOSFET Arrays Replacement Considerations
ALD114913SCL is a compatible SOIC package alternative within the same electrical specification family.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
