FET, MOSFET Arrays ALD210808PCL product image

ALD210808PCL

$3.94
  • Description:MOSFET 4N-CH 10.6V 0.08A 16PDIP
  • Series:EPAD®, Zero Threshold™

SKU:bfa25adbec6d Category: Brand:

  
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ALD210808PCL is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Advanced Linear Devices Inc.. Its product description is MOSFET 4N-CH 10.6V 0.08A 16PDIP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for ALD210808PCL

  • Description:MOSFET 4N-CH 10.6V 0.08A 16PDIP
  • Series:EPAD®, Zero Threshold™
  • Mfr:Advanced Linear Devices Inc.
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:4 N-Channel, Matched Pair
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):10.6V
  • Current - Continuous Drain (Id) @ 25°C:80mA
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:20mV @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:500mW
  • Operating Temperature:0°C ~ 70°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:16-DIP (0.300", 7.62mm)
  • Supplier Device Package:16-PDIP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for ALD210808PCL

ALD210808PCL

FET, MOSFET Arrays Overview

The ALD210808PCL is a precision enhancement mode N-Channel EPAD® MOSFET array manufactured by Advanced Linear Devices. It features four monolithic matched pairs with a gate threshold voltage (VGS(th)) of +0.80V ±0.01V at IDS = 10µA and VDS = 0.1V. The device operates within a supply range of +0.1V to +10V, delivering an on-current exceeding 50mA and maintaining a low on-resistance of 25Ω. It exhibits high transconductance, low input capacitance, and excellent temperature tracking characteristics suitable for low-power analog applications.

FET, MOSFET Arrays Feature Summary

  • Precision factory-matched electrical characteristics with minimal offset voltage
  • Enhanced forward and output conductance for low-voltage operation
  • Excellent temperature tracking between matched pairs
  • Low input bias current and leakage currents

FET, MOSFET Arrays Applications

  • Low overhead current mirrors and current sources
  • Zero power normally-on circuits
  • Very low voltage analog and digital circuits
  • High gain differential amplifier input stages
  • Charge detectors and charge integrators

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm package type and lead-free compliance. Ensure that the procurement channel provides valid traceability for the component lot. Confirm that the operating temperature range requirements align with the specified commercial limits before finalizing orders.

FET, MOSFET Arrays Selection Notes

Select this component when precise matching between multiple MOSFETs is required for analog signal processing. The +0.80V threshold voltage allows for ground-referenced input/output signals in low supply voltage environments. Consider the sub-threshold operation capabilities for designs requiring ultra-low power consumption or nanopower functionality.

FET, MOSFET Arrays Part Context

This part belongs to the ALD2108xx series of precision enhancement mode EPAD® MOSFET arrays. It serves as an upgraded version of the ALD1108xx family, offering increased transconductance and output conductance. The technology enables tight parametric control across production lots, ensuring consistent performance for precision analog circuit designs.

FET, MOSFET Arrays Replacement Considerations

The ALD210808APCL is available as a variant with tighter offset voltage specifications. Verify if the standard offset voltage limits of the ALD210808PCL meet the design requirements before considering the A-grade alternative.

ALD210808PCLALD210808PCL
$3.94
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