AM2305PE

$0.12

Description：MOSFET P-CH 20V 4.5A SOT-23
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:522728031254 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 4.5A SOT-23
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：43mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id：400mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：697 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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AM2305PE

Overview

The AM2305PE is a P-Channel Enhancement Mode MOSFET manufactured by Analog Power Inc. It features a Drain-Source Voltage (VDS) of -20 V and a Gate-Source Voltage (VGS) rating of ±8 V. The device utilizes low rDS(on) trench technology to achieve an on-resistance of 43 mΩ at VGS = -4.5 V, 54 mΩ at VGS = -2.5 V, and 120 mΩ at VGS = -1.8 V. Continuous drain current reaches -4.5 A at 25°C, with a pulsed drain current capability of -20 A. Thermal resistance from junction to ambient is 166 °C/W in steady state. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

Low on-state resistance achieved through trench technology
Fast switching speed capabilities
Low thermal impedance for efficient heat dissipation

Applications

White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits

Procurement Notes

Verify the specific package type and lead configuration against the SOT-23 mechanical drawing provided in the datasheet. Confirm that the operating voltage and current requirements align with the absolute maximum ratings, specifically the -20 V drain-source limit and -4.5 A continuous current threshold. Ensure thermal management strategies account for the 166 °C/W junction-to-ambient resistance under steady-state conditions.

Selection Notes

Select this component when a compact P-Channel MOSFET is required for low-voltage applications up to 20 V. The SOT-23 package suits space-constrained designs. Evaluate the gate drive voltage levels to ensure the desired on-resistance is met, as resistance increases significantly at lower gate voltages like -1.8 V. Consider the thermal performance if the application involves high duty cycles or elevated ambient temperatures.

Part Context

This part belongs to the Analog Power Inc. lineup of power MOSFETs designed for general-purpose switching applications. It is categorized as a P-Channel enhancement mode device suitable for load switches and low-side/high-side control in portable and automotive electronics. The SOT-23 packaging provides a small footprint compared to larger packages while maintaining adequate power handling for its class.