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The AM2329P is a P-Channel MOSFET manufactured by Analog Power Inc. It utilizes high cell density trench technology to achieve low on-resistance and minimal power loss. The device features a SOT-23 package with a copper leadframe for low thermal impedance. Key electrical characteristics include a drain-source voltage of -20V, a gate-source voltage of ±8V, and a continuous drain current of -1.7A at VGS = -1.8V. The on-resistance is specified as 0.290 Ohms under the same conditions.
Verify the manufacturer designation as Analog Power Inc. when sourcing this component. Confirm the specific datasheet version matches the required electrical parameters, particularly the on-resistance values at different gate-source voltages. Ensure the physical package corresponds to the standard SOT-23 footprint to maintain compatibility with existing board layouts.
Select this part for applications requiring efficient power management in compact designs. The low on-resistance supports higher efficiency and extended battery life in portable electronics. Consider the thermal performance provided by the copper leadframe for heat dissipation requirements within the small form factor constraints of the SOT-23 package.
This component belongs to the Analog Power Inc. lineup of miniature surface mount MOSFETs. These devices are engineered to provide low power loss and effective heat dissipation. The product line targets power management solutions for portable and battery-operated consumer electronics where space and efficiency are critical design factors.
Public confirmed substitute part numbers are not available in the verified documentation.