AM2336N-CT

$0.12

Description：MOSFET N-CH 30V 5.3A SOT-23
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:f750f7c98acb Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 5.3A SOT-23
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：64mOhm @ 3.3A, 2.5V
Vgs(th) (Max) @ Id：400mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：8 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：449 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：SOT-23

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AM2336N-CT

Overview

The AM2336N-CT is an N-channel MOSFET with a 30V drain-source voltage and ±12V gate-source rating. It features a low on-resistance of 32mΩ at VGS=4.5V and 64mΩ at VGS=2.5V. Continuous drain current is 5.3A at 25°C, dropping to 4.1A at 70°C. The device supports a pulsed drain current of 30A and operates within a junction temperature range of -55°C to 150°C. Thermal resistance (junction-to-ambient) is 166°C/W in steady state. Total gate charge is typically 8nC.

Feature Summary

Low rDS(on) trench technology for efficient conduction
Low thermal impedance for effective heat dissipation
Fast switching speed capabilities

Applications

White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits

Procurement Notes

Verify the specific suffix 'CT' against Analog Power Inc. documentation to confirm tape-and-reel packaging or specific binning requirements. Ensure the component matches the SOT-23 package dimensions provided in the datasheet. Confirm that the preliminary status does not affect final qualification for your design. Validate all electrical parameters against customer application needs before procurement.

Selection Notes

Select this component for applications requiring a compact N-channel MOSFET with moderate current handling. The low on-resistance makes it suitable for power conversion efficiency. Consider the thermal constraints given the 166°C/W junction-to-ambient resistance. Ensure gate drive voltages align with the specified thresholds for optimal performance. Verify compatibility with the intended switching frequencies based on gate charge characteristics.

Part Context

The AM2336N is part of Analog Power Inc.'s N-channel MOSFET lineup, designed for general-purpose switching applications. It utilizes trench technology to achieve low on-resistance. The device is housed in a SOT-23 package, offering a small footprint for surface-mount assembly. It is intended for use in consumer electronics, automotive, and industrial systems where space and efficiency are critical factors.