AM2336N

$0.04

Description：MOSFET N-CH 30V 5.3A SOT-23
Series：-
Mfr：Analog Power Inc.
Package：Tape & Reel (TR)

SKU:020c2678c0f6 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 5.3A SOT-23
Series：-
Mfr：Analog Power Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：64mOhm @ 3.3A, 2.5V
Vgs(th) (Max) @ Id：400mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：8 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：449 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：SC-59, SOT-23

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AM2336N

Overview

The AM2336N is an N-Channel MOSFET with a Drain-Source Voltage (VDS) of 30 V and Gate-Source Voltage (VGS) of ±12 V. It features a low on-resistance (rDS(on)) of 32 mΩ at VGS = 4.5 V and 64 mΩ at VGS = 2.5 V. The device supports a continuous drain current (ID) of 5.3 A at 25°C and 4.1 A at 70°C, with a pulsed drain current (IDM) of 30 A. Power dissipation is rated at 1.3 W at 25°C and 0.8 W at 70°C, utilizing a SOT-23 package.

Feature Summary

Utilizes low rDS(on) trench technology for enhanced efficiency
Features low thermal impedance copper leadframe design
Provides fast switching speed capabilities

Applications

White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits

Procurement Notes

Verify the component against the official Analog Power datasheet DS_AM2336N_1A to confirm pinout alignment and electrical ratings. Ensure the SOT-23 package dimensions match the specified mechanical tolerances. Validate that the supplier provides traceability documentation consistent with manufacturer standards before finalizing acquisition.

Selection Notes

Select this component when a compact N-Channel MOSFET with 30 V rating is required. The low on-resistance makes it suitable for power management applications where efficiency is critical. Consider the thermal resistance and current derating characteristics for high-temperature environments to ensure reliable operation within the specified junction temperature range.

Part Context

This part belongs to the Analog Power MOSFET family, designed for surface-mount applications. It utilizes a high cell density trench process to minimize power loss and heat dissipation. The device is optimized for portable and battery-powered products requiring efficient power conversion in small form factors.