AM2359PE

$0.79

Description：MOSFET P-CH 60V 1.2A SOT-23
Series：*
Mfr：Analog Power Inc.
Package：Bulk

SKU:42c6eca37d26 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 1.2A SOT-23
Series：*
Mfr：Analog Power Inc.
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：-
Package / Case：-

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AM2359PE

Overview

The AM2359PE is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Analog Power Inc. It utilizes Trench MOSFET technology to achieve low on-state resistance and fast switching characteristics within a compact SOT-23 surface-mounted device plastic package. The component is designed for logic level compatibility, featuring an electrostatic discharge protection rating exceeding 2 kV HBM. Its electrical specifications include a maximum drain-source voltage of -30 V and a continuous drain current capacity of 5.3 A at 25 °C ambient temperature. The gate-source threshold voltage is specified at 3 V with a test current of 250 uA, while the drain-source on-state resistance is rated at 45 mΩ under conditions of -10 V gate-source voltage and -4.2 A drain current at 25 °C. Maximum power dissipation is limited to 480 mW at 25 °C.

Feature Summary

Logic level compatible operation
Very fast switching capability
Trench MOSFET technology implementation
Electrostatic discharge protection exceeding 2 kV HBM

Applications

Relay driver circuits
High-speed line drivers
High-side load switch applications
General switching circuits

Procurement Notes

Verify the manufacturer designation as Nexperia rather than Analog Power Inc., as official datasheets attribute this part number to Nexperia. Confirm the specific suffix PE corresponds to the standard SOT-23 packaging configuration. Ensure the requested component matches the exact electrical ratings provided in the technical documentation to avoid functional mismatches in high-side switching designs.

Selection Notes

Select this component for applications requiring a small form factor P-channel MOSFET with robust ESD protection. The low on-state resistance supports efficient power handling in relay and load switch scenarios. Verify that the logic level threshold aligns with the control signal voltage levels of the target system to ensure reliable turn-on performance.

Part Context

This component belongs to the category of single N-channel or P-channel enhancement mode field-effect transistors utilizing trench technology. These devices are engineered for surface-mount assembly, offering a balance between current handling capabilities and physical footprint constraints typical of portable and compact electronic designs.