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Product Detailed Parameters
- Description：MOSFET N-CH 100V 290A TO-247
- Series：*
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The AM290N10-02FP is a single N-channel silicon MOSFET manufactured by Analog Power Inc. It features a drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) of 290A. The device exhibits a maximum on-resistance (RDS(on)) of 4.6 mΩ and a total gate charge (Qg) of 260 nC. With a power dissipation capability of 430W, it is housed in a TO-247-3 through-hole package designed for high-current applications.
Feature Summary
- Single N-channel silicon MOSFET technology
- High current handling capability up to 290A
- Low on-resistance for efficient power switching
- Through-hole mounting in TO-247-3 package
Applications
- Power supply units requiring high current output
- DC-DC converter circuits
- Motor control systems
- Industrial power management modules
Procurement Notes
Verify the specific manufacturer part number AM290N10-02FP against official Analog Power Inc. documentation to ensure authenticity. Confirm that the TO-247-3 package dimensions match your PCB footprint requirements. Check for any recent updates to the datasheet regarding thermal characteristics or absolute maximum ratings before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring a 100V rated N-channel MOSFET with high current capacity. The low RDS(on) value suggests suitability for applications where conduction losses must be minimized. Ensure the thermal management solution can handle the specified 430W power dissipation under operating conditions. Verify compatibility with the driving circuitry given the 260 nC gate charge requirement.
Part Context
Analog Power Inc. specializes in power management solutions, establishing its presence in the semiconductor market with a focus on MOSFETs and related components. The company maintains offices in California, Hong Kong, and Taiwan. This specific part belongs to their lineup of single FETs, targeting industrial and commercial power electronics markets with robust performance characteristics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official Analog Power Inc. resources or authorized distributors for verified equivalents. Cross-referencing electrical parameters such as VDS, ID, and RDS(on) is essential when evaluating alternative components from other manufacturers.
