AM320N06-02P

$1.35

Description：MOSFET N-CH 60V 230A TO-220
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:291695fd321a Category: Single FETs, MOSFETs Brand: Analog Power Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 230A TO-220
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：230A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.9mOhm @ 230A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：112 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：13147 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Download product information

AM320N06-02P

Overview

The AM320N06-02P is an N-channel 60-V (D-S) MOSFET manufactured by Analog Power Inc. It features a TO-220 through-hole package with the drain connected to the tab. Key electrical parameters include a continuous drain current of 230 A at case temperature and a power dissipation rating of 300 W at case temperature. The device utilizes low rDS(on) trench technology for efficient conduction.

Feature Summary

Low on-resistance trench technology
Fast switching speed
Low thermal impedance

Applications

Battery powered power tools

Procurement Notes

Verify the specific datasheet version, as documentation references DS_AM320N06-02P_1A. Confirm that the drain is connected to the tab in the TO-220 package. Ensure the application supports the 60 V drain-source voltage and 230 A current ratings under appropriate thermal management conditions for 300 W dissipation.

Selection Notes

Select this component for high-current applications requiring robust thermal performance via a through-hole package. The low thermal impedance and fast switching characteristics make it suitable for demanding environments. Verify that the system voltage does not exceed the 60 V limit and that heat sinking is adequate for the specified power dissipation.

Part Context

Analog Power Inc. specializes in power management solutions, including discrete semiconductors like MOSFETs. The company operates offices in San Jose, Hong Kong, and Taiwan. This part belongs to their lineup of single FETs designed for efficient power switching and regulation tasks.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other 60 V N-channel MOSFETs in TO-220 packages only if electrical parameters match exactly.