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Product Detailed Parameters
- Description：MOSFET N-CH 100V 34.6A TO-252
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：28mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AM40N10-28D is a single N-channel silicon MOSFET manufactured by Analog Power Inc. It features a drain-source voltage rating of 100V and a continuous drain current of 34.6A at case temperature. The device exhibits a typical on-resistance of 28 mOhm. It is housed in a surface-mount TO-252 package with a power dissipation capability of 50W at case temperature.
Feature Summary
- Single N-channel silicon construction for efficient switching applications
- Low on-resistance characteristic to minimize conduction losses
- Surface-mount TO-252 package design for compact integration
Applications
- DC-DC converter circuits
- Power switching modules
- Motor control systems
Procurement Notes
Verify the manufacturer part number AM40N10-28D against official Analog Power Inc. documentation to ensure authenticity. Confirm the TO-252 package type and electrical ratings match system requirements. Request datasheets for specific threshold voltage and thermal resistance values before procurement.
Selection Notes
Select this component for applications requiring 100V blocking capability and moderate current handling up to 34.6A. The TO-252 package suits surface-mount designs where space efficiency is prioritized. Ensure thermal management strategies account for the 50W case power dissipation limit under operating conditions.
Part Context
This component belongs to the single FET and MOSFET category from Analog Power Inc. It is designed as a discrete power semiconductor device intended for general-purpose switching roles within electronic circuits, distinct from integrated power modules or multi-fet arrays.
Replacement Considerations
Cross-reference with other 100V N-channel MOSFETs in TO-252 packages having comparable RDS(on) and ID ratings. Verify pinout compatibility and thermal characteristics when substituting.
