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Product Detailed Parameters
- Description：MOSFET N-CH 100V 26A TO-252
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：36mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.8 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1216 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AM40N10-30D is a single N-channel silicon MOSFET manufactured by Analog Power Inc. It features a drain-source voltage (VDS) rating of 100 V and a continuous drain current (ID) of 26 A at case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 36 mΩ. Thermal performance includes a power dissipation capacity of 50 W at case temperature. The component is housed in a surface-mount TO-252 (DPAK) package, suitable for applications requiring robust power switching capabilities within this voltage and current range.
Feature Summary
- Single N-channel silicon construction for efficient power switching
- Low on-resistance characteristic to minimize conduction losses
- Surface-mount TO-252 package design for compact integration
Applications
- DC-DC converter circuits
- Power switching modules
- Motor control applications
Procurement Notes
Verify the manufacturer part number AM40N10-30D against official Analog Power Inc. documentation to confirm specifications. Ensure the TO-252 package type matches system requirements. Cross-reference electrical parameters such as VDS and ID with the specific datasheet version. Confirm that the component meets all necessary safety and quality standards for the intended application environment before procurement.
Selection Notes
Select the AM40N10-30D when a 100 V N-channel MOSFET with 26 A current capability is required. Consider the 36 mΩ on-resistance for efficiency needs. The TO-252 package dictates board layout constraints. Evaluate thermal management solutions given the 50 W power dissipation rating at case temperature. Compare against alternative packages if space or mounting style differs.
Part Context
This component belongs to the family of single N-channel MOSFETs produced by Analog Power Inc. It is designed for general-purpose power switching applications. The TO-252 package provides a balance between current handling and surface-mount convenience. It serves as a discrete solution for managing power flow in electronic systems requiring moderate voltage and current ratings.
Replacement Considerations
Check for direct substitutes with identical 100 V, 26 A, and TO-252 specifications. Verify pinout compatibility and thermal characteristics. Ensure RDS(on) values are comparable to maintain circuit efficiency. Consult manufacturer cross-reference lists for validated alternatives.
