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Product Detailed Parameters
- Description：MOSFET P-CH 40V 34A TO-252
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：36A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：30mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1583 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The AM40P04-20D is a P-Channel Silicon MOSFET manufactured by Analog Power Inc. It features a Drain-Source Voltage (VDS) of 40 V and a continuous Drain Current (ID) of -36 A at Ta, with a thermal resistance rating of 50 W at Tc. The device utilizes a TO-252 (DPAK) surface mount package. Key electrical parameters include a Drain-Source On-Resistance (RDS(on)) of 30 mOhm and a Gate Threshold Voltage (VGS(th)) typically ranging from -1 V to -2.5 V. The component is designed for single FET applications requiring efficient power switching in compact form factors.
Feature Summary
- Utilizes P-Channel silicon technology for reliable power switching operations
- Engineered with low on-resistance characteristics to minimize conduction losses
- Designed for surface mount integration using the standard TO-252 package
Applications
- DC-DC converter circuits
- Power management modules
- Motor control systems
Procurement Notes
Verify the specific suffix 'D' against the manufacturer's official documentation to confirm the exact tape-and-reel quantity or packaging configuration. Ensure the ordering part number matches the required voltage and current ratings precisely. Cross-reference the datasheet revision date to guarantee compatibility with current design specifications and regulatory standards before finalizing procurement orders.
Selection Notes
Select this component when a P-Channel MOSFET with a 40 V breakdown voltage and high current handling capability is required. The TO-252 package offers a balance between thermal performance and board space efficiency. Consider the RDS(on) value for calculating power dissipation in the intended circuit. Verify that the gate drive voltage levels are compatible with the specified threshold voltage range for optimal switching performance.
Part Context
This component belongs to the Analog Power Inc. family of single N-Channel and P-Channel MOSFETs. Similar models in the series include the AM40N04-20D, which provides complementary N-Channel functionality with identical voltage and package specifications. These devices are engineered for general-purpose power switching applications where size and thermal management are critical constraints.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult the manufacturer's official cross-reference guide or equivalent parameter matching tools to identify compatible alternatives.
