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Product Detailed Parameters
- Description：MOSFET N-CH 150V 5.7A SO-8
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：5.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：6.5V, 10V
- Rds On (Max) @ Id, Vgs：65mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 6.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：968 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SO-8
- Package / Case：PowerPAK® SO-8
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Overview
The AM4356N is an N-channel power MOSFET manufactured by Analog Power Inc., designed for surface-mount applications in the SO-8 package. It features a drain-source voltage rating of 150 V and a continuous drain current capacity of 5.7 A at ambient temperature. The device supports a maximum power dissipation of 3.1 W under thermal conditions defined by Ta. Key electrical characteristics include a gate-source threshold voltage minimum of 1 V, with input capacitance specified at 968 pF when measured at a drain-source voltage of 15 V. The component operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Provides robust overvoltage protection through a high 150 V drain-source breakdown capability suitable for demanding power environments.
- Delivers significant current handling with a 5.7 A continuous drain rating optimized for efficient power switching operations.
- Ensures reliable thermal performance with a wide operating junction temperature range extending up to 150°C.
Applications
- DC-DC converter circuits requiring high-voltage isolation and efficient power switching
- Power management systems utilizing surface-mount technology for compact board layouts
- Industrial equipment power stages needing reliable N-channel MOSFET control
Procurement Notes
Verify the manufacturer designation as Analog Power Inc. to distinguish from other entities using similar identifiers. Confirm the specific SO-8 package variant matches your PCB footprint requirements. Ensure the 150 V rating aligns with your system's peak voltage stresses. Check datasheet revisions for any updates to thermal resistance or electrical limits before finalizing procurement specifications.
Selection Notes
Select this component when a 150 V N-channel MOSFET is required for surface-mount assembly. The 5.7 A current rating suits moderate power applications where space constraints favor the SO-8 form factor. Consider the 3.1 W power dissipation limit relative to your thermal design capabilities. Verify that the gate threshold voltage characteristics meet your driver circuit requirements for effective switching control.
Part Context
This part belongs to the family of N-channel enhancement mode MOSFETs produced by Analog Power Inc. These devices are engineered for general-purpose power switching applications. The AM4356N specifically targets designs needing higher voltage tolerance than standard low-voltage counterparts while maintaining a compact footprint. It complements other parts in the series offering varying current and voltage ratings.
Replacement Considerations
Cross-reference with other 150 V N-channel MOSFETs in SO-8 packages. Ensure substitute parts match the 5.7 A current rating and 3.1 W dissipation limits. Verify pin compatibility and thermal characteristics to maintain system reliability without redesigning the PCB layout.
