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Product Detailed Parameters
- Description：MOSFET N-CH 60V 7.4A SO-8
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：7.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：38mOhm @ 6.7A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1465 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The AM4402N is an N-Channel MOSFET manufactured by Analog Power Inc. It features a Drain-Source Voltage (VDS) of 30 V and a Gate-Source Voltage (VGS) of ±20 V. The device offers a maximum continuous Drain Current (ID) of 10 A at 25°C ambient temperature. Key electrical parameters include a Drain-Source On-Resistance (RDS(on)) of 16 mΩ at VGS = 10 V and 20 mΩ at VGS = 4.5 V. The component utilizes SO-8 packaging and operates within a junction temperature range of -55°C to +175°C.
Feature Summary
- Utilizes low RDS(on) trench technology for efficient power conduction.
- Designed with fast switching speed characteristics suitable for high-frequency applications.
- Features low thermal impedance to facilitate effective heat dissipation.
Applications
- White LED boost converters
- Automotive systems
- Industrial DC/DC conversion circuits
Procurement Notes
Verify the specific manufacturer designation, as Analog Power Inc. may be distinct from major semiconductor distributors. Confirm the package type matches the required SO-8 footprint and ensure the voltage ratings align with the target circuit design before procurement.
Selection Notes
Select this component for applications requiring a 30-V N-Channel MOSFET with a 10-A current capacity. Ensure the gate drive voltage supports the specified RDS(on) thresholds. Verify that the thermal management solution accommodates the device's power dissipation capabilities in the intended operating environment.
Part Context
This component belongs to the Analog Power Inc. MOSFET portfolio, specifically designed for general-purpose switching applications. It serves as a discrete power semiconductor solution for managing electrical loads in compact electronic designs requiring reliable N-Channel performance.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer cross-reference lists or authorized distributor databases for verified compatible alternatives.
