AM4403P

$1.63

Description：MOSFET P-CH 100V 2A SO-8
Series：*
Mfr：Analog Power Inc.
Package：Bulk

SKU:cc51572d3b94 Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 100V 2A SO-8
Series：*
Mfr：Analog Power Inc.
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：-
Package / Case：-

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AM4403P

Overview

The AM4403P is a single P-channel MOSFET from Analog Power Inc. It features a maximum drain-source voltage (VDS) of -150 V and a maximum gate-source voltage (VGS) of 20 V. The device has a typical on-resistance (RDS(on)) of 560 mΩ at VGS = -10 V, with a maximum rating of 580 mΩ. It supports a continuous drain current (ID) of 10 A and offers a total gate charge (QG) of 10 nC. The component is housed in an SO-8 package and provides a power dissipation (PD) capability of 3.1 W.

Feature Summary

High-voltage P-channel configuration rated for -150 V drain-source breakdown
Low gate charge design enabling efficient switching performance
Robust thermal handling within the compact SO-8 surface-mount footprint

Applications

Power management circuits requiring high-side switching
DC-DC converter topologies utilizing P-channel control
Load switch applications for -150 V systems

Procurement Notes

Verify the specific datasheet revision to confirm RDS(on) test conditions and thermal resistance values. Ensure the SO-8 package dimensions match the target PCB layout. Confirm that the -150 V rating aligns with the system's peak transient voltage requirements. Check for any specific handling instructions regarding electrostatic discharge sensitivity during assembly.

Selection Notes

Select this component when a P-channel solution is required for voltages up to -150 V. The low gate charge makes it suitable for driving directly from logic or standard drivers without excessive delay. The SO-8 package is appropriate for applications where moderate power dissipation is needed alongside space constraints. Evaluate thermal performance based on the 3.1 W dissipation limit under actual operating conditions.

Part Context

This part belongs to the Analog Power Inc. portfolio of discrete semiconductors. It is categorized as a single P-channel MOSFET designed for general-purpose power switching. The SO-8 package indicates a surface-mount technology intended for automated assembly processes in consumer and industrial electronics manufacturing.