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The AM4405P is a single P-channel MOSFET manufactured by Analog Power Inc. It features a maximum drain-source voltage (VDS) of -150 V and a maximum gate-source voltage (VGS) of 20 V. The device has a typical on-resistance (RDS(on)) of 260 mΩ at VGS = -10 V, with a maximum rating of 280 mΩ. It supports a continuous drain current (ID) of 3.1 A and has a total gate charge (QG) of 21 nC. The component is housed in an SO-8 package and offers a power dissipation (PD) capability of 3.1 W.
Verify the specific datasheet version and manufacturing lot details when sourcing this component. Confirm that the SO-8 package markings match the official Analog Power Inc. specifications. Ensure compatibility with your PCB footprint and thermal design requirements before finalizing procurement decisions.
Select the AM4405P when a P-channel MOSFET with -150 V breakdown voltage and moderate current handling is required. Consider its 260 mΩ on-resistance for efficiency needs and the SO-8 package for space-constrained layouts. Compare against complementary models like AM4403P or AM4411P if different resistance or current ratings are needed.
Analog Power Inc. specializes in power management solutions, including N-channel and P-channel MOSFETs with low on-resistance. The AM4405P belongs to their portfolio of discrete power semiconductors designed for diverse applications across consumer, industrial, and automotive sectors. The company emphasizes engineering support and market-specific product optimization.
The maximum drain-source voltage (VDS) for the AM4405P is -150 V.
The AM4405P is available in an SO-8 package.