ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH -30V 15A SOIC-8
- Series：-
- Mfr：Analog Power Inc.
- Package：Strip
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：13mOhm @ 9.7A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：56 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4441 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOIC-8
- Package / Case：-
Download product information
Overview
The AM4407P-CT is a P-channel enhancement-mode MOSFET from Analog Power Inc. It features a -30 V drain-source voltage and a -15 A continuous drain current at 25°C, packaged in an SO-8 footprint. The device utilizes low on-resistance trench technology, achieving a maximum rDS(on) of 9 mΩ at VGS = -10 V and 13 mΩ at VGS = -4.5 V. It supports a maximum junction temperature of 150°C and offers a thermal resistance (RθJA) of 80°C/W under standard surface mount conditions.
Feature Summary
- Low on-resistance trench technology for efficient power handling
- Fast switching speed with optimized gate charge characteristics
- Low thermal impedance enabling effective heat dissipation
Applications
- White LED boost converters
- Automotive systems
- Industrial DC/DC conversion circuits
Procurement Notes
Verify the specific suffix 'CT' against official Analog Power documentation to confirm tape-and-reel packaging or variant specifications. Ensure the ordered component matches the SO-8 package outline and electrical ratings detailed in the datasheet. Confirm RoHS compliance status directly with the manufacturer prior to procurement.
Selection Notes
Select this component for applications requiring a -30 V P-channel switch with high current capability. The low rDS(on) values support efficient operation at both -10 V and -4.5 V gate drive levels. Evaluate the 80°C/W thermal resistance against your board's copper area and ambient conditions to ensure junction temperatures remain within the 150°C limit during steady-state operation.
Part Context
This part belongs to the Analog Power P-channel MOSFET family designed for general-purpose switching. It serves as a load switch or high-side control element in power management circuits. The SO-8 package provides a compact solution for surface-mount assembly while maintaining robust electrical performance for industrial and automotive environments.
Replacement Considerations
Cross-reference pinouts and absolute maximum ratings when substituting. Verify that alternative devices offer comparable rDS(on) at -4.5 V and -10 V VGS levels. Ensure replacement packages match the SO-8 dimensions and thermal characteristics to maintain circuit reliability.
