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Product Detailed Parameters
- Description：MOSFET P-CH -30V 21A SOIC-8
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11.7mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：136 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：9350 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOIC-8
- Package / Case：SOIC-8
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Overview
The Analog Power AM4431P is a P-Channel MOSFET featuring a -30V drain-source voltage and ±20V gate-source rating. It delivers a continuous drain current of -4.8A at 25°C, with a peak pulsed current of -80A. The device exhibits low on-resistance, specified as 5mΩ at VGS=-10V and 7mΩ at VGS=-4.5V. Thermal performance includes a junction-to-ambient resistance of 80°C/W in steady state. Total gate charge is typically 136nC, supporting efficient switching operations.
Feature Summary
- Utilizes low rDS(on) trench technology for enhanced efficiency
- Features fast switching speed capabilities
- Provides low thermal impedance for effective heat dissipation
Applications
- White LED boost converters
- Automotive Systems
- Industrial DC/DC Conversion Circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Confirm that the component meets required automotive or industrial qualification standards if applicable. Ensure compatibility with existing PCB footprints by referencing the provided mechanical dimensions. Validate electrical parameters against the latest datasheet revision prior to final design implementation.
Selection Notes
Select this component for applications requiring high-side switching with logic-level gate drive compatibility. The low on-resistance at VGS=-4.5V makes it suitable for microcontroller-controlled circuits. Evaluate thermal requirements based on the 80°C/W junction-to-ambient resistance for steady-state operation. Consider the total gate charge when designing driver circuits for optimal switching performance.
Part Context
This part belongs to the Analog Power P-Channel MOSFET family, designed for power management and switching applications. It complements N-Channel variants within the manufacturer's portfolio, offering complementary solutions for bridge configurations. The device targets compact designs where space efficiency and thermal management are critical constraints.
Replacement Considerations
Cross-reference pinouts and thermal characteristics carefully. Verify that substitute components meet or exceed the -30V VDS and -4.8A ID ratings. Ensure the replacement supports the same SO-8 package footprint.
