AM4434N-CT

AM4434N-CT

$0.51
  • Description:MOSFET N-CH 30V 18.6A SOIC-8
  • Series:-
  • Mfr:Analog Power Inc.
  • Package:Bulk

SKU:32e4475c4fc9 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 30V 18.6A SOIC-8
  • Series:-
  • Mfr:Analog Power Inc.
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:18.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:8mOhm @ 16.1A, 2.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:25 nC @ 4.5 V
  • Vgs (Max):12V
  • Input Capacitance (Ciss) (Max) @ Vds:2586 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOIC-8
  • Package / Case:SOIC-8

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AM4434N-CT

Overview

The AM4434N is a N-Channel 30-V (D-S) MOSFET utilizing high cell density trench technology. It features low rDS(on) of 18.6 mΩ at VGS = 4.5V and 16.1 mΩ at VGS = 2.5V, with continuous drain current (ID) of 18.6 A at TA=25°C and 15.7 A at TA=70°C. Pulsed drain current (IDM) reaches 60 A. The device operates within a junction temperature range of -55 to 150°C. Thermal resistance (RθJA) is 40°C/W for pulse widths ≤10 sec and 80°C/W for steady state. Gate-source voltage maximum is ±12 V.

Feature Summary

  • Low on-resistance provides higher efficiency and extends battery life
  • Low thermal impedance copper leadframe in SOIC-8 package saves board space
  • Fast switching speed enabled by high performance trench technology

Applications

  • DC-DC converters
  • Power management in portable products
  • Battery-powered computers
  • Printers
  • PCMCIA cards
  • Cellular and cordless telephones

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm tape and reel configuration or packaging variations. Ensure the component version matches the preliminary datasheet publication number DS-AM4434_A for accurate electrical parameter validation before integration into final designs.

Selection Notes

Select this component for applications requiring compact surface-mount solutions with efficient power handling. The SOIC-8 package offers space savings while maintaining robust thermal performance through its copper leadframe. Consider the low gate threshold voltage and fast switching characteristics for optimizing drive circuits in portable electronics and battery-operated systems.

Part Context

The AM4434N belongs to Analog Power's lineup of miniature surface mount MOSFETs designed for high efficiency. It complements other N-Channel devices like the AM4404N and AM4936N, offering specific voltage and current ratings tailored for portable and battery-powered consumer electronics and industrial control applications.

Replacement Considerations

Cross-reference pinouts and thermal characteristics when substituting. Verify that alternative components meet the 30V drain-source voltage and 18.6A continuous current requirements within the same SOIC-8 footprint.

FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDM) is 60 A.

What is the operating junction temperature range?

The operating junction and storage temperature range is -55 to 150°C.

AM4434N-CTAM4434N-CT
$0.51
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