AM4840N

$0.48

Description：MOSFET N-CH 40V 9.7A SOIC-8
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:813e343989ec Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 9.7A SOIC-8
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：22mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1306 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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AM4840N

Overview

The Analog Power AM4840N is an N-channel enhancement mode MOSFET housed in an SO-8 surface-mount package. It features a drain-source voltage rating of 40 V and a continuous drain current of 9.7 A at 25°C, with a maximum pulsed drain current of 40 A. The device exhibits a low on-state resistance of 22 mΩ at VGS = 10 V and 27 mΩ at VGS = 4.5 V. Thermal performance includes a junction-to-ambient thermal resistance of 80 °C/W under standard surface mount conditions. Operating parameters support a junction temperature range from -55°C to +150°C.

Feature Summary

Low on-resistance trench technology for reduced conduction losses
Fast switching speed capabilities suitable for high-frequency applications
Low thermal impedance design for efficient heat dissipation

Applications

DC/DC conversion circuits
Power routing systems
Motor drive implementations

Procurement Notes

Verify the specific manufacturer designation upon procurement, as Analog Power Inc. may operate under different corporate entities or branding structures compared to major semiconductor distributors. Confirm that the datasheet revision matches the ordered component batch to ensure parameter consistency. Request official documentation directly from authorized supply channels to validate authenticity and traceability before integration into production designs.

Selection Notes

Select this component for applications requiring a 40 V breakdown voltage with moderate current handling in compact surface-mount layouts. Evaluate the gate threshold voltage requirements against the control logic levels, noting the specified resistance values at both 10 V and 4.5 V gate drives. Ensure the thermal management strategy accounts for the 80 °C/W junction-to-ambient rating when designing for steady-state operation within the specified temperature limits.

Part Context

This component belongs to the category of single N-channel power MOSFETs designed for general-purpose switching. It utilizes trench technology to achieve low on-resistance within a small SO-8 footprint. The device is engineered for efficiency in power conversion and motor control applications where space constraints and thermal performance are critical design factors.