AM4841P-CT

$0.36

Description：MOSFET P-CH -40V 7.7A SOIC-8
Series：-
Mfr：Analog Power Inc.
Package：Bulk

SKU:cb5c454d06cb Category: Single FETs, MOSFETs Brand: Analog Power Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH -40V 7.7A SOIC-8
Series：-
Mfr：Analog Power Inc.
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：7.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：45mOhm @ 4.9A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1826 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOIC-8
Package / Case：SOIC-8

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AM4841P-CT

Overview

The Analog Power AM4841P is a P-Channel MOSFET featuring a -40 V drain-source voltage rating and an SO-8 surface-mount package. It delivers a continuous drain current of -7.7 A at 25°C, reducing to -6.5 A at 70°C, with a pulsed current capacity of -30 A. The device utilizes low on-resistance trench technology, achieving 35 mΩ at VGS = 10V and 45 mΩ at VGS = 4.5V. Thermal performance includes a junction-to-ambient resistance of 80 °C/W and an operating temperature range from -55°C to +150°C.

Feature Summary

Low on-resistance trench technology for efficient power switching
Fast switching speed capabilities
Low thermal impedance design

Applications

Load Switches
DC/DC Conversion
Motor Drives

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging configuration. Confirm that the component meets all required environmental standards for your intended deployment. Ensure technical specifications align precisely with system requirements before finalizing procurement decisions.

Selection Notes

Select this component based on its -40 V rating and SO-8 footprint suitability for compact designs. Evaluate the 35 mΩ on-resistance at 10V gate drive against load requirements. Consider the 80 °C/W thermal resistance for heat dissipation needs in steady-state operations within the specified temperature range.

Part Context

This part belongs to the Analog Power discrete semiconductor portfolio, specifically designed as a P-Channel MOSFET. It serves as a standalone switching element within power management circuits, distinct from integrated power modules or complex driver ICs.

Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinouts, voltage ratings, and thermal characteristics carefully when evaluating alternative components.