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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 11A SO-8
- Series：-
- Mfr：Analog Power Inc.
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Rds On (Max) @ Id, Vgs：13.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The AM4910N is a dual N-channel MOSFET component manufactured by Analog Power Inc. It features a maximum drain-source voltage (VDS) of 30 V and a maximum gate-source voltage (VGS) of 20 V. The device has a typical on-resistance (VRDS(on)) of 13.5 mΩ measured at a gate-source voltage of 10 V, and 20 mΩ at 4.5 V. The continuous drain current (ID) rating is 20 A. The total gate charge (QG) is specified as 10 nC, and the maximum power dissipation (PD) is 13 W. The component is housed in an SO-8 package with a thermal resistance value of 2.1 °C/W.
Feature Summary
- Dual N-channel configuration for complementary switching applications
- Low on-resistance characteristics optimized for high-efficiency conduction
- Integrated thermal management within a compact surface-mount package
Applications
- DC-DC converter circuits
- Motor driver interfaces
- Power switching modules
Procurement Notes
Verify the specific manufacturer datasheet to confirm pinout compatibility and absolute maximum ratings before integration. Ensure that the operating conditions remain within the specified voltage and current limits to maintain device reliability and prevent thermal overstress during operation.
Selection Notes
Select this component when a dual N-channel topology is required for space-constrained designs. Evaluate the 13.5 mΩ on-resistance against the expected load current to ensure acceptable conduction losses. Confirm that the 20 A current rating aligns with the peak and continuous load requirements of the target application circuit.
Part Context
This part belongs to the Analog Power Inc. MOSFET portfolio, specifically designed for general-purpose power switching. The dual configuration allows for efficient half-bridge or synchronous rectifier implementations. The SO-8 package provides a balance between thermal performance and board space efficiency compared to larger through-hole alternatives.
Replacement Considerations
Cross-reference with other dual N-channel MOSFETs offering similar 30 V/20 A ratings and SO-8 packaging. Verify that substitute parts match the on-resistance and gate charge specifications to ensure equivalent switching performance and thermal behavior.
