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The AM4920N is a dual N-channel MOSFET manufactured by Analog Power Inc. It features a maximum drain-source voltage (VDS) of 30 V and a gate-source voltage (VGS) rating of 20 V. The device offers a typical on-resistance (RDS(on)) of 34 mΩ at VGS = 10 V and 41 mΩ at VGS = 4.5 V. Continuous drain current (ID) is rated at 6.9 A. The component is housed in a SO-8 package with a thermal resistance (RθJA) of 4°C/W.
Verify the manufacturer part number against official Analog Power Inc. documentation to ensure authenticity. Confirm that the specific suffix matches the required package and tape-and-reel specifications. Check for RoHS compliance status as indicated in the latest datasheet revision. Ensure storage conditions adhere to moisture sensitivity level requirements prior to assembly.
Select the AM4920N when a compact dual N-channel solution is required for low-voltage switching applications. Evaluate the 34 mΩ on-resistance against thermal constraints to determine if additional heatsinking is necessary. Compare the 6.9 A continuous current rating with peak load requirements. Consider the SO-8 footprint compatibility during PCB layout planning.
This component belongs to the Analog Power Inc. discrete semiconductor portfolio, specifically within their MOSFET lineup. The manufacturer provides various packaging options across their product range to accommodate different thermal and density requirements. This dual configuration allows designers to utilize two matched transistors in a single standard outline package.